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dc.contributor.authorKerr, A. J.
dc.contributor.authorChagarov, E.
dc.contributor.authorGu, S.
dc.contributor.authorKaufman-Osborn, T.
dc.contributor.authorMadisetti, S.
dc.contributor.authorWu, J.
dc.contributor.authorAsbeck, P. M.
dc.contributor.authorOktyabrsky, S.
dc.contributor.authorKummel, A. C.
dc.creator
dc.date.accessioned2017-02-20T19:11:14Z
dc.date.available2017-02-20T19:11:14Z
dc.date.issued2014
dc.identifier.citationKerr, A. J., Chagarov, E., Gu, S., Kaufman-Osborn, T., Madisetti, S., Wu, J., . . . Kummel, A. C. (2014). Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide. Journal of Chemical Physics, 141, 104702. doi:10.1063/1.4894541en_US
dc.identifier.issn0021-9606
dc.identifier.urihttp://hdl.handle.net/1951/68925
dc.description.abstractA combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFTMD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al2O3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).en_US
dc.description.sponsorshipDepartment of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, USA Department of Nanoscale Science and Engineering, University at Albany–State University of New York, Albany, New York 12222, USAen_US
dc.language.isoen_USen_US
dc.publisherJournal of Chemical Physicsen_US
dc.subjectGaN(0001)en_US
dc.subjectXPS modelingen_US
dc.subjectDFTMD modelingen_US
dc.subjectnucleationen_US
dc.subjectgate oxide atomic layer depositionen_US
dc.subjectwet sulfur treatmenten_US
dc.subjectgate oxide depositionen_US
dc.subjectgallium surface atomsen_US
dc.subjectoxide interfacial atomsen_US
dc.subjecttetrahedral bondingen_US
dc.titlePreparation of gallium nitride surfaces for atomic layer deposition of aluminum oxideen_US
dc.title.alternativeJournal of Chemical Physicsen_US
dc.typeArticleen_US


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