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    Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

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    Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide_Final.pdf (1.410Mb)
    Date
    2014
    Author
    Kerr, A. J.
    Chagarov, E.
    Gu, S.
    Kaufman-Osborn, T.
    Madisetti, S.
    Wu, J.
    Asbeck, P. M.
    Oktyabrsky, S.
    Kummel, A. C.
    Publisher
    Journal of Chemical Physics
    Metadata
    Show full item record
    Subject
    GaN(0001)
    XPS modeling
    DFTMD modeling
    nucleation
    gate oxide atomic layer deposition
    wet sulfur treatment
    gate oxide deposition
    gallium surface atoms
    oxide interfacial atoms
    tetrahedral bonding
    Abstract
    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFTMD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al2O3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).
    URI
    http://hdl.handle.net/1951/68925
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    • SUNY Polytechnic Institute Faculty and Staff Research, Publications, and Creative Works [63]

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