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    Nanoscale mapping of the W/Si(001) Schottky barrier

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    Nanoscale mapping of the WiS001Schottky barrier_Final.pdf (1.447Mb)
    Date
    2014
    Author
    Durcan, Chris A.
    Balsano, Robert
    LaBella, Vincent P.
    Publisher
    Journal of Applied Physics
    Metadata
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    Subject
    ballistic electron emission microscopy
    W/Si(001) Schottky barrier
    ballistic hole emission microscopy
    microscopy
    transmission electron microscopy
    Rutherford backscattering spectrometry
    interfacial tungsten silicide
    Prietsch Ludeke fitting exponent
    histogram
    power law BEEM model
    Gaussian component
    interface dipole model
    Abstract
    The W/Si(001) Schottky barrier was spatially mapped with nanoscale resolution using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using n-type and p-type silicon substrates. The formation of an interfacial tungsten silicide is observed utilizing transmission electron microscopy and Rutherford backscattering spectrometry. The BEEM and BHEM spectra are fit utilizing a linearization method based on the power law BEEM model using the Prietsch Ludeke fitting exponent. The aggregate of the Schottky barrier heights from n-type (0.71 eV) and p-type (0.47 eV) silicon agrees with the silicon band gap at 80 K. Spatially resolved maps of the Schottky barrier are generated from grids of 7225 spectra taken over a 1 um x 1 um area and provide insight into its homogeneity. Histograms of the barrier heights have a Gaussian component consistent with an interface dipole model and show deviations that are localized in the spatial maps and are attributed to compositional fluctuations, nanoscale defects, and foreign materials.
    URI
    http://hdl.handle.net/1951/68900
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    • SUNY Polytechnic Institute Faculty and Staff Research, Publications, and Creative Works [63]

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