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dc.contributor.authorChidambaram, Thenappan
dc.contributor.authorVeksler, Dmitry
dc.contributor.authorMadisetti, Shailesh
dc.contributor.authorGreene, Andrew
dc.contributor.authorYakimov, Michael
dc.contributor.authorTokranov, Vadim
dc.contributor.authorHill, Richard
dc.contributor.authorOktyabrsky, Serge
dc.creator
dc.date.accessioned2017-02-09T15:56:51Z
dc.date.available2017-02-09T15:56:51Z
dc.date.issued2014
dc.identifier.citationChidambaram, T., Veksler, D., Madisetti, S., Greene, A., Yakimov, M., Tokranov, V., . . . Oktyabrsky, S. (2014). Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method. Applied Physics Letters, 104(13), 1-4. doi:10.1063/1.4870257en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1951/68886
dc.description.abstractIn this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm2/Vs is observed at ~1.4 10 12 cm-2. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 10 11 cm -2. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.en_US
dc.description.sponsorshipSUNY College of Nanoscale Science and Engineering, Albany, New York 12203, USA, and SEMATECH, Albany, New York 12203, USAen_US
dc.language.isoen_USen_US
dc.publisherApplied Physics Lettersen_US
dc.subjectgated Hall methoden_US
dc.subjectfree carrier densityen_US
dc.subjectelectron mobilityen_US
dc.subjectquantum wellsen_US
dc.subjecttemperature dependenceen_US
dc.subjectelectron mobilityen_US
dc.subjectCoulomb scatteringen_US
dc.subjectelectron densityen_US
dc.subjectinterface/border trapsen_US
dc.subjectcapacitance-voltage measurementen_US
dc.subjectelectrostatic modelingen_US
dc.subjectfast trapsen_US
dc.subjectfree channel carrieren_US
dc.subjectchannel densityen_US
dc.subjectcarrier mobilityen_US
dc.titleInterface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall methoden_US
dc.typeArticleen_US


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