dc.contributor.author | Chidambaram, Thenappan | |
dc.contributor.author | Veksler, Dmitry | |
dc.contributor.author | Madisetti, Shailesh | |
dc.contributor.author | Greene, Andrew | |
dc.contributor.author | Yakimov, Michael | |
dc.contributor.author | Tokranov, Vadim | |
dc.contributor.author | Hill, Richard | |
dc.contributor.author | Oktyabrsky, Serge | |
dc.creator | | |
dc.date.accessioned | 2017-02-09T15:56:51Z | |
dc.date.available | 2017-02-09T15:56:51Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | Chidambaram, T., Veksler, D., Madisetti, S., Greene, A., Yakimov, M., Tokranov, V., . . . Oktyabrsky, S. (2014). Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method. Applied Physics Letters, 104(13), 1-4. doi:10.1063/1.4870257 | en_US |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/1951/68886 | |
dc.description.abstract | In this work, we are using a gated Hall method for measurement of free carrier density and electron
mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor
channels. At room temperature, mobility over 8000 cm2/Vs is observed at ~1.4 10 12 cm-2.
Temperature dependence of the electron mobility gives the evidence that remote Coulomb
scattering dominates at electron density <2 10 11 cm -2. Spectrum of the interface/border traps is
quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic
modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be
distinguished from free channel carriers just by capacitance-based methods and can be the reason
for significant overestimation of channel density and underestimation of carrier mobility from
transistor measurements. | en_US |
dc.description.sponsorship | SUNY College of Nanoscale Science and Engineering, Albany, New York 12203, USA, and
SEMATECH, Albany, New York 12203, USA | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Applied Physics Letters | en_US |
dc.subject | gated Hall method | en_US |
dc.subject | free carrier density | en_US |
dc.subject | electron mobility | en_US |
dc.subject | quantum wells | en_US |
dc.subject | temperature dependence | en_US |
dc.subject | electron mobility | en_US |
dc.subject | Coulomb scattering | en_US |
dc.subject | electron density | en_US |
dc.subject | interface/border traps | en_US |
dc.subject | capacitance-voltage measurement | en_US |
dc.subject | electrostatic modeling | en_US |
dc.subject | fast traps | en_US |
dc.subject | free channel carrier | en_US |
dc.subject | channel density | en_US |
dc.subject | carrier mobility | en_US |
dc.title | Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method | en_US |
dc.type | Article | en_US |