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    Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

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    Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method_Final.pdf (1.179Mb)
    Date
    2014
    Author
    Chidambaram, Thenappan
    Veksler, Dmitry
    Madisetti, Shailesh
    Greene, Andrew
    Yakimov, Michael
    Tokranov, Vadim
    Hill, Richard
    Oktyabrsky, Serge
    Publisher
    Applied Physics Letters
    Metadata
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    Subject
    gated Hall method
    free carrier density
    electron mobility
    quantum wells
    temperature dependence
    electron mobility
    Coulomb scattering
    electron density
    interface/border traps
    capacitance-voltage measurement
    electrostatic modeling
    fast traps
    free channel carrier
    channel density
    carrier mobility
    Abstract
    In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm2/Vs is observed at ~1.4 10 12 cm-2. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 10 11 cm -2. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.
    URI
    http://hdl.handle.net/1951/68886
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    • SUNY Polytechnic Institute Faculty and Staff Research, Publications, and Creative Works [63]

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