Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Date
2014Author
Chidambaram, ThenappanVeksler, Dmitry
Madisetti, Shailesh
Greene, Andrew
Yakimov, Michael
Tokranov, Vadim
Hill, Richard
Oktyabrsky, Serge
Publisher
Applied Physics LettersMetadata
Show full item recordSubject
gated Hall methodfree carrier density
electron mobility
quantum wells
temperature dependence
electron mobility
Coulomb scattering
electron density
interface/border traps
capacitance-voltage measurement
electrostatic modeling
fast traps
free channel carrier
channel density
carrier mobility