Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Loading...
Thumbnail Image
Issue Date
2014
Authors
Chidambaram, Thenappan
Veksler, Dmitry
Madisetti, Shailesh
Greene, Andrew
Yakimov, Michael
Tokranov, Vadim
Hill, Richard
Oktyabrsky, Serge
Publisher
Applied Physics Letters
Keywords
gated Hall method , free carrier density , electron mobility , quantum wells , temperature dependence , electron mobility , Coulomb scattering , electron density , interface/border traps , capacitance-voltage measurement , electrostatic modeling , fast traps , free channel carrier , channel density , carrier mobility
Abstract
In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm2/Vs is observed at ~1.4 10 12 cm-2. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 10 11 cm -2. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.
Description
DOI