Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties
Date
2014Author
Madisetti, ShaileshTokranov, Vadim
Greene, Andrew
Yakimov, Michael
Hirayama, Makoto
Oktyabrsky, Serge
Publisher
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and PhenomenaMetadata
Show full item recordSubject
heteroepitaxial molecular beamsepitaxy
InGaSb quantum well
migration enhanced epitaxy technique
atomic force microscopy
Auger electron spectroscopy
growth-related defects
threading dislocations
microtwins
antiphase boundaries
surface morphology
defect density