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dc.contributor.authorO'Brien, Brendan
dc.contributor.authorRizzolo, Michael
dc.contributor.authorPrestowitz, Luke
dc.contributor.authorDunn, Kathleen
dc.creator
dc.date.accessioned2016-12-29T17:41:56Z
dc.date.available2016-12-29T17:41:56Z
dc.date.issued2015-09-01
dc.identifier.citationO'Brien, B. B., Rizzolo, M., Prestowitz, L. C., & Dunn, K. k. (2015). Rapid trench initiated recrystallization and stagnation in narrow Cu interconnect lines. Applied Physics Letters, 107(17), 1-5. DOI: 10.1063/1.4932577.en_US
dc.identifier.issn00036951
dc.identifier.otherDOI: 10.1063/1.4932577
dc.identifier.urihttp://hdl.handle.net/1951/68698
dc.description.abstractUnderstanding and ultimately controlling the self-annealing of Cu in narrow interconnect lines has remained a top priority in order to continue down-scaling of back-end of the line interconnects. Recently, it was hypothesized that a bottom-up microstructural transformation process in narrow interconnect features competes with the surface-initiated overburden transformation. Here, a set of transmission electron microscopy images which captures the grain coarsening process in 48 nm lines in a time resolved manner is presented, supporting such a process. Grain size measurements taken from these images have demonstrated that the Cu microstructural transformation in 48 nm interconnect lines stagnates after only 1.5 h at room temperature. This stubborn metastable structure remains stagnant, even after aggressive elevated temperature anneals, suggesting that a limited internal energy source such as dislocation content is driving the transformation. As indicated by the extremely low defect density found in 48 nm trenches, a rapid recrystallization process driven by annihilation of defects in the trenches appears to give way to a metastable microstructure in the trenches.en_US
dc.publisherAmerican Institute of Physicsen_US
dc.subjectRecrystallizationen_US
dc.subjectInterconnectsen_US
dc.subjectMicrostructureen_US
dc.subjectTransmission Electron Microscopyen_US
dc.subjectThermodynamicsen_US
dc.titleRapid trench initiated recrystallization and stagnation in narrow Cu interconnect linesen_US
dc.typeArticleen_US


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