Now showing items 1-2 of 2

    • Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) 

      Medikonda, Manasa; Muthinti, Gangadhara R.; Vasić, Relja; Adam, Thomas N.; Reznicek, Alexander; Wormington, Matthew; Malladi, Girish; Kim, Yihwan; Huang, Yi-Chiau; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      The characterization of the optical properties of pseudomorphic Ge1-xSnx/Ge/Si (x=0 to 0.11) alloys from the IR to UV is presented. The Ge1-xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering ...
    • Substrate dielectric effects on graphene field effect transistors 

      Hu, Zhaoying; Sinha, Dhiraj Prasad; Lee, Ji Ung; Liehr, Michael (Journal of Applied Physics, 2014)
      Graphene is emerging as a promising material for future electronics and optoelectronics applications due to its unique electronic structure. Understanding the graphene-dielectric interaction is of vital importance for the ...