Now showing items 1-4 of 4

    • Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties 

      Madisetti, Shailesh; Tokranov, Vadim; Greene, Andrew; Yakimov, Michael; Hirayama, Makoto; Oktyabrsky, Serge (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced ...
    • Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects 

      Upadhyaya, Mihir; Basavalingappa, Adarsh; Herbol, Henry; Denbeaux, Gregory; Jindal, Vibhu; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2016)
      The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, ...
    • Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects 

      Upadhyaya, Mihir; Basavalingappa, Adarsh; Herbol, Henry; Denbeaux, Gregory (American Vacuum Society, 2015-02-01)
      The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, ...
    • Surface oxidation of the topological insulator Bi2Se3 

      Green, Avery J.; Dey, Sonal; An, Yong Q.; O'Brien, Brendan; O'Mullane, Samuel; Thiel, Bradley; Diebold, Alain C. (Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016)
      An understanding of the aging and oxidation of the (0001) surface of Bi2Se3 is critical to a comprehensive physical picture of its topologically protected surface states. Here, the authors contribute new experimental ...