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    • Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties 

      Madisetti, Shailesh; Tokranov, Vadim; Greene, Andrew; Yakimov, Michael; Hirayama, Makoto; Oktyabrsky, Serge (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced ...