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    • Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications 

      Dey, Sunal; Yu, Kai-Hung; Consiglio, Steven; Tapily, Kandabara; Hakamata, Takahiro; Wajda, Cory S.; Leusink, Gert J.; Jordan-Sweet, Jean; Lavoie, Christian; Muir, David; Moreno, Beatriz; Diebold, Alain C. (Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2017)
      Resistance capacitance time delay in Cu interconnects is becoming a significant factor requiring further performance improvements in future nanoelectronic devices. Choice of alternate interconnect materials, for example, ...