Now showing items 1-20 of 62

  • Substrate dielectric effects on graphene field effect transistors 

    Hu, Zhaoying; Sinha, Dhiraj Prasad; Lee, Ji Ung; Liehr, Michael (Journal of Applied Physics, 2014)
    Graphene is emerging as a promising material for future electronics and optoelectronics applications due to its unique electronic structure. Understanding the graphene-dielectric interaction is of vital importance for the ...
  • Thermal coefficient of resistivity of ultrathin Ag films deposited on Cu for applications in emerging interconnect systems 

    Tatem, Elroy A.; Kaloyeros, Alain E.; Eisenbraun, Eric T. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
    As the semiconductor industry continues to scale feature sizes, scattering from phonons, surfaces, and grain boundaries results in a significant increase in metal interconnect resistivity. In this work, a thin Ag capping ...
  • Importance of growth direction in mid-infrared quantum cascade lasers 

    Bouzi, Pierre M.; Chiu, YenTing; Deutsch, Christoph; Dikmelik, Yamac; Song, Yu; Tokranov, Vadim; Oktyabrsky, Serge; Gmachl, Claire (Journal of Applied Physics, 2014)
    We report on the effect of growth direction on the performance of mid-infrared Quantum Cascade lasers. The design used has a symmetric active core, capable of operating under both negative and positive polarities, which ...
  • Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method 

    Chidambaram, Thenappan; Veksler, Dmitry; Madisetti, Shailesh; Greene, Andrew; Yakimov, Michael; Tokranov, Vadim; Hill, Richard; Oktyabrsky, Serge (Applied Physics Letters, 2014)
    In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, ...
  • Nanoscale mapping of the W/Si(001) Schottky barrier 

    Durcan, Chris A.; Balsano, Robert; LaBella, Vincent P. (Journal of Applied Physics, 2014)
    The W/Si(001) Schottky barrier was spatially mapped with nanoscale resolution using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using n-type and p-type silicon substrates. ...
  • Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide 

    Kerr, A. J.; Chagarov, E.; Gu, S.; Kaufman-Osborn, T.; Madisetti, S.; Wu, J.; Asbeck, P. M.; Oktyabrsky, S.; Kummel, A. C. (Journal of Chemical Physics, 2014)
    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFTMD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer ...
  • Disorder density of states in supported graphene 

    Lee, Ji Ung; Sinha, Dhiraj (Journal of Applied Physics, 2014)
    Transport in graphene is impacted by disorder. Disorder, which can occur on supported graphene, manifests as a significant shift in the Fermi level position from the charge neutrality point (Dirac point) and leads to ...
  • Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes 

    Malladi, Girish; Huang, Mengbing; Murray, Thomas; Novak, Steven; Matsubayashi, Akitomo; LaBella, Vincent; Bakhru, Hassaram (Journal of Applied Physics, 2014)
    Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and ...
  • Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties 

    Madisetti, Shailesh; Tokranov, Vadim; Greene, Andrew; Yakimov, Michael; Hirayama, Makoto; Oktyabrsky, Serge (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
    A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced ...
  • Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) 

    Medikonda, Manasa; Muthinti, Gangadhara R.; Vasić, Relja; Adam, Thomas N.; Reznicek, Alexander; Wormington, Matthew; Malladi, Girish; Kim, Yihwan; Huang, Yi-Chiau; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
    The characterization of the optical properties of pseudomorphic Ge1-xSnx/Ge/Si (x=0 to 0.11) alloys from the IR to UV is presented. The Ge1-xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering ...
  • Enhancing one dimensional sensitivity with plasmonic coupling 

    O’Mullane, Samuel; Peterson, Brennan; Race, Joseph; Keller, Nick; Diebold, Alain C. (Optics Express, 2014)
    In this paper, we propose a cross-grating structure to enhance the critical dimension sensitivity of one dimensional nanometer scale metal gratings. Making use of the interaction between slight changes in refractive index ...
  • Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes 

    Consiglio, Steven; Tapily, Kandabara; Clark, Robert D.; Hasegawa, Toshio; Amano, Fumitaka; Leusink, Gert J.; Jordan-Sweet, Jean; Vasić, Relja; Medikonda, Manasa; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
    In this study, the authors examined the effects of different annealing schemes on crystallinity in atomic layer deposition (ALD) grown Ti-containing metal gates and ultrathin ALD HfO2 high-k dielectric layers, and corresponding ...
  • Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1-xGex/Si fin structures using x-ray reciprocal space maps 

    Medikonda, Manasa; Muthinti, Gangadhara R.; Fronheiser, Jody; Kamineni, Vimal; Wormington, Matthew; Matney, Kevin; Adam, Thomas N.; Karapetrova, Evguenia; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
    Characterization of the periodicity and strain state of an array of lithographically patterned silicon and silicon-germanium alloy on silicon fins using reciprocal space mapping of Bragg diffraction peaks is presented. ...
  • Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors 

    Hu, Zhaoying; Tulevski, George S.; Hannon, James B.; Afzali, Ali; Liehr, Michael; Park, Hongsik (Applied Physics Letters, 2015)
    Carbon nanotubes (CNTs) have been widely studied as a channel material of scaled transistors for high-speed and low-power logic applications. In order to have sufficient drive current, it is widely assumed that CNT-based ...
  • Engineering structurally interacting RNA (sxRNA) 

    Doyle, Francis; Lapsia, Sameer; Spadaro, Salvatore; Wurz, Zachary E.; Bhaduri-McIntosh, Sumita; Tenenbaum, Scott A. (Scientific Reports, 2015)
    RNA-based three-way junctions (3WJs) are naturally occurring structures found in many functional RNA molecules including rRNA, tRNA, snRNA and ribozymes. 3WJs are typically characterized as resulting from an RNA molecule ...
  • Nucleotide Salvage Deficiencies, DNA Damage and Neurodegeneration 

    Fasullo, Michael; Endres, Laurel (International Journal of Molecular Sciences, 2015)
    Nucleotide balance is critically important not only in replicating cells but also in quiescent cells. This is especially true in the nervous system, where there is a high demand for adenosine triphosphate (ATP) produced ...
  • Pulsed-N2 assisted growth of 5-20 nm thick β−W films 

    Narasimham, Avyaya J.; Green, Avery; Matyi, Richard J.; Khare, Prasanna; Vo, Tuan; Diebold, Alain; LaBella, Vincent P. (AIP Advances, 2015)
    A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity ...
  • Metrology for block copolymer directed self-assembly structures using Mueller matrixbased scatterometry 

    Dixit, Dhairya J.; Kamineni, Vimal; Farrell, Richard; Hosler, Erik R.; Preil, Moshe; Race, Joseph; Peterson, Brennan; Diebold, Alain C. (Journal of Micro/Nanolithography, MEMS, and MOEMS, 2015)
    Patterning based on directed self-assembly (DSA) of block copolymer (BCP) has been demonstrated to be a cost-effective manufacturing technique for advanced sub-20-nm structures. This paper describes the application of ...
  • Advancements in Real-Time Availability in Interlibrary Loan 

    Pritting, Shannon; Jones, William (Taylor and Francis, 2015-01)
    Determining if items are available is a major part of interlibrary loan work. Many libraries try to minimize staff time spent on determining availability by investing in circulation-based resource-sharing systems that ...
  • Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects 

    Upadhyaya, Mihir; Basavalingappa, Adarsh; Herbol, Henry; Denbeaux, Gregory (American Vacuum Society, 2015-02-01)
    The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, ...