Now showing items 18-37 of 63

    • Genetic Analysis of the Indri Reveals No Evidence of Distinct Subspecies 

      Brenneman, Rick; McLain, Adam; Taylor, Justin; Zaonarivelo, John; Lei, Runhua; McGuire, Susie; Andriantompohavana, Rambinintsoa; Rylands, Anthony; Louis Jr., Edward (Springer, 2016-07-25)
      Subspecies were traditionally defined by identifying gaps between phenotypes across the geographic range of a species, and may represent important units in the development of conservation strategies focused on preserving ...
    • Geometric algebra and information geometry for quantum computational software 

      Cafaro, Carlo (Physica A: Statistical Mechanics and its Applications, 2017-03-15)
      The art of quantum algorithm design is highly nontrivial. Grover’s search algorithm constitutes a masterpiece of quantum computational software. In this article, we use methods of geometric algebra (GA) and information ...
    • Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties 

      Madisetti, Shailesh; Tokranov, Vadim; Greene, Andrew; Yakimov, Michael; Hirayama, Makoto; Oktyabrsky, Serge (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced ...
    • Importance of growth direction in mid-infrared quantum cascade lasers 

      Bouzi, Pierre M.; Chiu, YenTing; Deutsch, Christoph; Dikmelik, Yamac; Song, Yu; Tokranov, Vadim; Oktyabrsky, Serge; Gmachl, Claire (Journal of Applied Physics, 2014)
      We report on the effect of growth direction on the performance of mid-infrared Quantum Cascade lasers. The design used has a symmetric active core, capable of operating under both negative and positive polarities, which ...
    • Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method 

      Chidambaram, Thenappan; Veksler, Dmitry; Madisetti, Shailesh; Greene, Andrew; Yakimov, Michael; Tokranov, Vadim; Hill, Richard; Oktyabrsky, Serge (Applied Physics Letters, 2014)
      In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, ...
    • Investigating efficient methods for computing four-quark correlation functions 

      Abdel-Rehim, Abdou; Alexandrou, Constantia; Berlin, Joshua; Dalla Brida, Mattia; Finkenrath, Jacob; Wagner, Marc (Computer Physics Communications, 2017-07-11)
      We discuss and compare the efficiency of various methods, combinations of point-to-all propagators, stochastic timeslice-to-all propagators, the one-end trick and sequential propagators, to compute two-point correlation ...
    • Large-scale ex vivo generation of human neutrophils from cord blood CD34+ cells 

      Jie, Zhenwang; Zhang, Yu; Wang, Chen; Shen, Bin; Guan, Xin; Ren, Zhihua; Ding, Xinxin; Dai, Wei; Jiang, Yongping (PLoS ONE, 2017-07-11)
      Conventional high-dose chemotherapy frequently leads to severe neutropenia, during which patients experience a high risk of infection. Although support care with donor’s neutrophils is possible this choice is largely ...
    • Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects 

      Upadhyaya, Mihir; Basavalingappa, Adarsh; Herbol, Henry; Denbeaux, Gregory (American Vacuum Society, 2015-02-01)
      The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, ...
    • Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects 

      Upadhyaya, Mihir; Basavalingappa, Adarsh; Herbol, Henry; Denbeaux, Gregory; Jindal, Vibhu; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2016)
      The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, ...
    • Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1-xGex/Si fin structures using x-ray reciprocal space maps 

      Medikonda, Manasa; Muthinti, Gangadhara R.; Fronheiser, Jody; Kamineni, Vimal; Wormington, Matthew; Matney, Kevin; Adam, Thomas N.; Karapetrova, Evguenia; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      Characterization of the periodicity and strain state of an array of lithographically patterned silicon and silicon-germanium alloy on silicon fins using reciprocal space mapping of Bragg diffraction peaks is presented. ...
    • Metrology for block copolymer directed self-assembly structures using Mueller matrixbased scatterometry 

      Dixit, Dhairya J.; Kamineni, Vimal; Farrell, Richard; Hosler, Erik R.; Preil, Moshe; Race, Joseph; Peterson, Brennan; Diebold, Alain C. (Journal of Micro/Nanolithography, MEMS, and MOEMS, 2015)
      Patterning based on directed self-assembly (DSA) of block copolymer (BCP) has been demonstrated to be a cost-effective manufacturing technique for advanced sub-20-nm structures. This paper describes the application of ...
    • Modeling ellipsometric measurement of three-dimensional structures with rigorous coupled wave analysis and finite element method simulations 

      O’Mullane, Samuel; Keller, Nick; Diebold, Alain C. (Journal of Micro/Nanolithography, MEMS and MOEMS, 2016)
      Using rigorous coupled wave analysis (RCWA) and finite element method (FEM) simulations together, many interesting ellipsometric measurements can be investigated. This work specifically focuses on simulating copper grating ...
    • Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects 

      Basavalingappa, Adarsh; Shen, Ming Y.; Lloyd, James R. (Mechanics of Advanced Materials and Modern Processes, 2017)
      Copper is the primary metal used in integrated circuit manufacturing of today. Even though copper is face centered cubic it has significant mechanical anisotropy depending on the crystallographic orientations. Copper metal ...
    • Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion 

      Zhang, Xiang; Mitin, Vladimir; Sergeev, Andrei; Sablon, Kimberly A.; Yakimov, Michael; Oktyabrsky, Serge; Choi, Jung-ki; Strasser, Gottfried (IOP Publishing, 2017)
      Advanced selective doping provides effective tool for nanoscale engineering of potential barriers and photoelectron processes in quantum well (QW) and quantum dot (QD) optoelectronic nanomaterials for IR sensing and wide ...
    • Nanoscale mapping of the W/Si(001) Schottky barrier 

      Durcan, Chris A.; Balsano, Robert; LaBella, Vincent P. (Journal of Applied Physics, 2014)
      The W/Si(001) Schottky barrier was spatially mapped with nanoscale resolution using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using n-type and p-type silicon substrates. ...
    • A novel impedance biosensor for measurement of trans-epithelial resistance in cells cultured on nanofiber scaffolds 

      Schramm, Robert A.; Koslow, Matthew H.; Nelson, Deirdre A.; Larsen, Melinda; Castracane, James (MDPI AG, based in Basel, Switzerland, 2017)
      Nanofibrous scaffolds provide high surface area for cell attachment, and resemble the structure of the collagen fibers which naturally occur in the basement membrane and extracellular matrix. A label free and non-destructive ...
    • Nucleotide Salvage Deficiencies, DNA Damage and Neurodegeneration 

      Fasullo, Michael; Endres, Laurel (International Journal of Molecular Sciences, 2015)
      Nucleotide balance is critically important not only in replicating cells but also in quiescent cells. This is especially true in the nervous system, where there is a high demand for adenosine triphosphate (ATP) produced ...
    • Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06μm to beyond 2.4μm 

      Singh, Neetesh; Xin, Ming; Vermeulen, Diedrik; Shtyrkova, Katia; Li, Nanxi; Callahan, Patrick T.; Magden, Emir Salih; Ruocco, Alfonso; Fahrenkopf, Nicholas; Baiocco, Christopher; Kuo, Bill P-P; Radic, Stojan; Ippen, Erich; Kärtner, Franz X.; Watts, Michael R. (Changchun Institute of Optics, Fine Mechanics and Physics, 2018)
      Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards ...
    • Open Scholarship on a Shoestring 

      Hewitt, Rebecca; Parker, Jennifer; Pritting, Shannon (2018-06)
      Grant funding has been central to SUNY Polytechnic’s leadership in the open access (OA) campaign on campus. Partnering with SUNY, regional, and campus associations, our library has won thousands of dollars to support ...
    • Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) 

      Medikonda, Manasa; Muthinti, Gangadhara R.; Vasić, Relja; Adam, Thomas N.; Reznicek, Alexander; Wormington, Matthew; Malladi, Girish; Kim, Yihwan; Huang, Yi-Chiau; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      The characterization of the optical properties of pseudomorphic Ge1-xSnx/Ge/Si (x=0 to 0.11) alloys from the IR to UV is presented. The Ge1-xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering ...