Now showing items 25-44 of 63

    • Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects 

      Upadhyaya, Mihir; Basavalingappa, Adarsh; Herbol, Henry; Denbeaux, Gregory (American Vacuum Society, 2015-02-01)
      The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, ...
    • Level-set multilayer growth model for predicting printability of buried native extreme ultraviolet mask defects 

      Upadhyaya, Mihir; Basavalingappa, Adarsh; Herbol, Henry; Denbeaux, Gregory; Jindal, Vibhu; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2016)
      The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, ...
    • Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1-xGex/Si fin structures using x-ray reciprocal space maps 

      Medikonda, Manasa; Muthinti, Gangadhara R.; Fronheiser, Jody; Kamineni, Vimal; Wormington, Matthew; Matney, Kevin; Adam, Thomas N.; Karapetrova, Evguenia; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      Characterization of the periodicity and strain state of an array of lithographically patterned silicon and silicon-germanium alloy on silicon fins using reciprocal space mapping of Bragg diffraction peaks is presented. ...
    • Metrology for block copolymer directed self-assembly structures using Mueller matrixbased scatterometry 

      Dixit, Dhairya J.; Kamineni, Vimal; Farrell, Richard; Hosler, Erik R.; Preil, Moshe; Race, Joseph; Peterson, Brennan; Diebold, Alain C. (Journal of Micro/Nanolithography, MEMS, and MOEMS, 2015)
      Patterning based on directed self-assembly (DSA) of block copolymer (BCP) has been demonstrated to be a cost-effective manufacturing technique for advanced sub-20-nm structures. This paper describes the application of ...
    • Modeling ellipsometric measurement of three-dimensional structures with rigorous coupled wave analysis and finite element method simulations 

      O’Mullane, Samuel; Keller, Nick; Diebold, Alain C. (Journal of Micro/Nanolithography, MEMS and MOEMS, 2016)
      Using rigorous coupled wave analysis (RCWA) and finite element method (FEM) simulations together, many interesting ellipsometric measurements can be investigated. This work specifically focuses on simulating copper grating ...
    • Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects 

      Basavalingappa, Adarsh; Shen, Ming Y.; Lloyd, James R. (Mechanics of Advanced Materials and Modern Processes, 2017)
      Copper is the primary metal used in integrated circuit manufacturing of today. Even though copper is face centered cubic it has significant mechanical anisotropy depending on the crystallographic orientations. Copper metal ...
    • Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion 

      Zhang, Xiang; Mitin, Vladimir; Sergeev, Andrei; Sablon, Kimberly A.; Yakimov, Michael; Oktyabrsky, Serge; Choi, Jung-ki; Strasser, Gottfried (IOP Publishing, 2017)
      Advanced selective doping provides effective tool for nanoscale engineering of potential barriers and photoelectron processes in quantum well (QW) and quantum dot (QD) optoelectronic nanomaterials for IR sensing and wide ...
    • Nanoscale mapping of the W/Si(001) Schottky barrier 

      Durcan, Chris A.; Balsano, Robert; LaBella, Vincent P. (Journal of Applied Physics, 2014)
      The W/Si(001) Schottky barrier was spatially mapped with nanoscale resolution using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using n-type and p-type silicon substrates. ...
    • A novel impedance biosensor for measurement of trans-epithelial resistance in cells cultured on nanofiber scaffolds 

      Schramm, Robert A.; Koslow, Matthew H.; Nelson, Deirdre A.; Larsen, Melinda; Castracane, James (MDPI AG, based in Basel, Switzerland, 2017)
      Nanofibrous scaffolds provide high surface area for cell attachment, and resemble the structure of the collagen fibers which naturally occur in the basement membrane and extracellular matrix. A label free and non-destructive ...
    • Nucleotide Salvage Deficiencies, DNA Damage and Neurodegeneration 

      Fasullo, Michael; Endres, Laurel (International Journal of Molecular Sciences, 2015)
      Nucleotide balance is critically important not only in replicating cells but also in quiescent cells. This is especially true in the nervous system, where there is a high demand for adenosine triphosphate (ATP) produced ...
    • Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06μm to beyond 2.4μm 

      Singh, Neetesh; Xin, Ming; Vermeulen, Diedrik; Shtyrkova, Katia; Li, Nanxi; Callahan, Patrick T.; Magden, Emir Salih; Ruocco, Alfonso; Fahrenkopf, Nicholas; Baiocco, Christopher; Kuo, Bill P-P; Radic, Stojan; Ippen, Erich; Kärtner, Franz X.; Watts, Michael R. (Changchun Institute of Optics, Fine Mechanics and Physics, 2018)
      Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards ...
    • Open Scholarship on a Shoestring 

      Hewitt, Rebecca; Parker, Jennifer; Pritting, Shannon (2018-06)
      Grant funding has been central to SUNY Polytechnic’s leadership in the open access (OA) campaign on campus. Partnering with SUNY, regional, and campus associations, our library has won thousands of dollars to support ...
    • Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) 

      Medikonda, Manasa; Muthinti, Gangadhara R.; Vasić, Relja; Adam, Thomas N.; Reznicek, Alexander; Wormington, Matthew; Malladi, Girish; Kim, Yihwan; Huang, Yi-Chiau; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      The characterization of the optical properties of pseudomorphic Ge1-xSnx/Ge/Si (x=0 to 0.11) alloys from the IR to UV is presented. The Ge1-xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering ...
    • Platinum and palladium oxalates: positive-tone extreme ultraviolet resists 

      Sortland, Miriam; Hotalen, Jodi; Del Re, Ryan; Passarelli, James; Murphy, Michael; Kulmala, Tero; Ekinci, Yasin; Neisser, Mark; Freedman, Daniel; Brainard, Robert (Society of Photo-Optical Instrumentation Engineers (SPIE), 2015-12-24)
      Here, we present platinum and palladium mononuclear complexes with EUV photosensitivity and lithographic performance. Many platinum and palladium complexes show little or no EUV sensitivity; however, we have found that ...
    • Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide 

      Kerr, A. J.; Chagarov, E.; Gu, S.; Kaufman-Osborn, T.; Madisetti, S.; Wu, J.; Asbeck, P. M.; Oktyabrsky, S.; Kummel, A. C. (Journal of Chemical Physics, 2014)
      A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFTMD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer ...
    • Process development for high resolution hydrogen silsesquioxane patterning using a commercial scanner for extreme ultraviolet lithography 

      Desai, Vishal; Mellish, Mac; Bennett, Stephen; Cady, Nathaniel (American Vacuum Society, 2017-02)
      The semiconductor industry is transitioning toward the use of extreme ultraviolet (EUV) lithography as a next generation patterning technology. There are currently only a limited number of high resolution EUV photoresists ...
    • Pulse width and height modulation for multi-level resistance in bi-layer TaOx based RRAM 

      Alamgir, Zahiruddin; Beckmann, Karsten; Holt, Joshua; Cady, Nathaniel C. (AIP Publishing, 2017-08-11)
      Mutli-level switching in resistive memory devices enables a wide range of computational paradigms, including neuromorphic and cognitive computing. To this end, we have developed a bilayer tantalum oxide based resistive ...
    • Pulsed-N2 assisted growth of 5-20 nm thick β−W films 

      Narasimham, Avyaya J.; Green, Avery; Matyi, Richard J.; Khare, Prasanna; Vo, Tuan; Diebold, Alain; LaBella, Vincent P. (AIP Advances, 2015)
      A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity ...
    • Rapid trench initiated recrystallization and stagnation in narrow Cu interconnect lines 

      O'Brien, Brendan; Rizzolo, Michael; Prestowitz, Luke; Dunn, Kathleen (American Institute of Physics, 2015-09-01)
      Understanding and ultimately controlling the self-annealing of Cu in narrow interconnect lines has remained a top priority in order to continue down-scaling of back-end of the line interconnects. Recently, it was hypothesized ...
    • Redox control of senescence and age-related disease 

      Chandrasekaran, Akshaya; Idelchik, Maria del Pilar Sosa; Melendez, J. Andrés (Redox Biology, 2017-03)
      The signaling networks that drive the aging process, associated functional deterioration, and pathologies has captured the scientific community's attention for decades. While many theories exist to explain the aging process, ...