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Pulsed-N2 assisted growth of 5-20 nm thick β−W films
(AIP Advances, 2015)
A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity ...