Now showing items 1-3 of 3
Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method
(Applied Physics Letters, 2014)
In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, ...
Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties
(Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced ...
Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion
(IOP Publishing, 2017)
Advanced selective doping provides effective tool for nanoscale engineering of potential barriers and photoelectron processes in quantum well (QW) and quantum dot (QD) optoelectronic nanomaterials for IR sensing and wide ...