Now showing items 1-3 of 3
Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
(Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2017)
Resistance capacitance time delay in Cu interconnects is becoming a significant factor requiring further performance improvements in future nanoelectronic devices. Choice of alternate interconnect materials, for example, ...
Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks
(Journal of Applied Physics, 2016)
Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 ...
Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
(Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
In this study, the authors examined the effects of different annealing schemes on crystallinity in atomic layer deposition (ALD) grown Ti-containing metal gates and ultrathin ALD HfO2 high-k dielectric layers, and corresponding ...