Browsing SUNY Polytechnic Institute by Author "Tokranov, Vadim"
Now showing items 1-3 of 3
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Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties
(Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced ... -
Importance of growth direction in mid-infrared quantum cascade lasers
(Journal of Applied Physics, 2014)We report on the effect of growth direction on the performance of mid-infrared Quantum Cascade lasers. The design used has a symmetric active core, capable of operating under both negative and positive polarities, which ... -
Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method
(Applied Physics Letters, 2014)In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, ...
