Browsing SUNY Polytechnic Institute by Author "Tapily, Kandabara"
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Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
Dey, Sunal; Yu, Kai-Hung; Consiglio, Steven; Tapily, Kandabara; Hakamata, Takahiro; Wajda, Cory S.; Leusink, Gert J.; Jordan-Sweet, Jean; Lavoie, Christian; Muir, David; Moreno, Beatriz; Diebold, Alain C. (Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2017)Resistance capacitance time delay in Cu interconnects is becoming a significant factor requiring further performance improvements in future nanoelectronic devices. Choice of alternate interconnect materials, for example, ... -
Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
Consiglio, Steven; Tapily, Kandabara; Clark, Robert D.; Hasegawa, Toshio; Amano, Fumitaka; Leusink, Gert J.; Jordan-Sweet, Jean; Vasić, Relja; Medikonda, Manasa; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)In this study, the authors examined the effects of different annealing schemes on crystallinity in atomic layer deposition (ALD) grown Ti-containing metal gates and ultrathin ALD HfO2 high-k dielectric layers, and corresponding ... -
Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks
Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C. (Journal of Applied Physics, 2016)Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 ...