Browsing SUNY Polytechnic Institute by Author "Greene, Andrew"

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Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

Madisetti, Shailesh; Tokranov, Vadim; Greene, Andrew; Yakimov, Michael; Hirayama, Makoto; Oktyabrsky, Serge (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)

A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced ...
Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Chidambaram, Thenappan; Veksler, Dmitry; Madisetti, Shailesh; Greene, Andrew; Yakimov, Michael; Tokranov, Vadim; Hill, Richard; Oktyabrsky, Serge (Applied Physics Letters, 2014)

In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, ...