Browsing SUNY Polytechnic Institute by Author "Clark, Robert D."

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Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes

Consiglio, Steven; Tapily, Kandabara; Clark, Robert D.; Hasegawa, Toshio; Amano, Fumitaka; Leusink, Gert J.; Jordan-Sweet, Jean; Vasić, Relja; Medikonda, Manasa; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)

In this study, the authors examined the effects of different annealing schemes on crystallinity in atomic layer deposition (ALD) grown Ti-containing metal gates and ultrathin ALD HfO2 high-k dielectric layers, and corresponding ...
Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks

Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C. (Journal of Applied Physics, 2016)

Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 ...