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dc.contributor.advisorSalman, Emreen_US
dc.contributor.authorSatheesh, Suhas Mysoreen_US
dc.contributor.otherDepartment of Electrical Engineeringen_US
dc.date.accessioned2013-05-22T17:35:33Z
dc.date.available2013-05-22T17:35:33Z
dc.date.issued1-May-12en_US
dc.date.submitted12-Mayen_US
dc.identifierSatheesh_grad.sunysb_0771M_10918en_US
dc.identifier.urihttp://hdl.handle.net/1951/59853
dc.description55 pg.en_US
dc.description.abstractThree primary techniques for manufacturing through silicon vias (TSVs), via-first, via-middle, and via-last, have been analyzed and compared to distribute power in a three-dimensional (3-D) processor-memory system with nine planes. Due to distinct fabrication techniques, these TSV technologies require significantly different design constraints, as investigated in this work. A valid design space that satisfies the peak power supply noise while minimizing area overhead is identified for each technology. It is demonstrated that the area overhead of a power distribution network with via-first TSVs is approximately 9% as compared to less than 2% in via-middle and via-last technologies. Despite this drawback, a via-first based power network is typically overdamped and the issue of resonance is alleviated. A via-last based power network, however, exhibits a relatively low damping factor and the peak noise is highly sensitive to number of TSVs and decoupling capacitance.en_US
dc.description.sponsorshipStony Brook University Libraries. SBU Graduate School in Department of Electrical Engineering. Charles Taber (Dean of Graduate School).en_US
dc.formatElectronic Resourceen_US
dc.language.isoen_USen_US
dc.publisherThe Graduate School, Stony Brook University: Stony Brook, NY.en_US
dc.subject.lcshElectrical engineeringen_US
dc.subject.other3-D IC, Decoupling capacitor, Peak noise, Power delivery, Processor-memory, TSVen_US
dc.titlePOWER DISTRIBUTION IN TSV BASED 3-D PROCESSOR-MEMORY STACKSen_US
dc.typeThesisen_US
dc.description.advisorAdvisor(s): Salman, Emre . Committee Member(s): Stanacevic, Milutin.en_US
dc.mimetypeApplication/PDFen_US


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