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dc.date.accessioned2007-06-12T20:03:12Z
dc.date.available2007-06-12T20:03:12Z
dc.date.issued2005-09
dc.identifier.urihttp://hdl.handle.net/1951/41479
dc.descriptionSemiconductors -- September 2005 Volume 39, Issue 9, pp. 989-1109 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Formation of Nanostructures in a Ga2Se3/GaAs System N. N. Bezryadin, G. I. Kotov, I. N. Arsent'ev, and A. A. Starodubtsev pp. 989-992 Full Text: PDF (175 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques V. V. Ushakov and Yu. V. Klevkov pp. 993-997 Full Text: PDF (145 kB) Exact Self-Compensation of Conduction in Cd0.95Zn0.05Te:Cl Crystals in a Wide Range of Cd Vapor Pressures O. A. Matveev, A. I. Terent'ev, N. K. Zelenina, V. N. Gus'kov, V. E. Sedov, A. A. Tomasov, and V. P. Karpenko pp. 998-1003 Full Text: PDF (76 kB) Optical Properties of ZnGeP2 in the UV Spectral Region Yu. M. Basalaev, A. B. Gordienko, and A. S. Poplavnoi pp. 1004-1006 Full Text: PDF (48 kB) Instability of Drift Waves in Two-Component Solid-State Plasma A. A. Bulgakov and O. V. Shramkova pp. 1007-1012 Full Text: PDF (103 kB) Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin pp. 1013-1016 Full Text: PDF (59 kB) Study of the Properties of Hg1 – x – y – zCdxMnyZnzTe as a New Infrared Optoelectronic Material I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitnyi, I. M. Fodchuk, V. V. Zhikharevich, V. G. Deibuk, N. A. Popenko, I. V. Ivanchenko, A. A. Zhigalov, and S. Yu. Karelin pp. 1017-1022 Full Text: PDF (140 kB) Transport Coefficients of n-Bi2Te2.7Se0.3 in a Two-Band Model of the Electron Spectrum P. P. Konstantinov, L. V. Prokof'eva, M. I. Fedorov, D. A. Pshenai-Severin, Yu. I. Ravich, V. V. Kompaniets, and V. A. Chistyakov pp. 1023-1027 Full Text: PDF (68 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed to a Single Radiation Pulse from a Ruby Laser A. Baidullaeva, A. I. Vlasenko, L. F. Cuzan, O. S. Litvin, and P. E. Mozol' pp. 1028-1031 Full Text: PDF (365 kB) Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate S. Yu. Davydov and A. V. Pavlyk pp. 1032-1034 Full Text: PDF (33 kB) Photoelectric Properties of Surface-Barrier Structures Based on Zn2 – 2xCuxInxSe2 Films Obtained by Selenization V. Yu. Rud', Yu. V. Rud', V. F. Gremenok, E. P. Zaretskaya, and O. N. Sergeeva pp. 1035-1039 Full Text: PDF (147 kB) Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures V. A. Gergel', Yu. V. Gulyaev, and M. N. Yakupov pp. 1040-1044 Full Text: PDF (71 kB) LOW-DIMENSIONAL SYSTEMS Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers A. M. Emel'yanov, N. A. Sobolev, E. I. Shek, V. V. Lundin, A. S. Usikov, and E. O. Parshin pp. 1045-1047 Full Text: PDF (47 kB) A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor S. A. Ignatenko and V. E. Borisenko pp. 1048-1052 Full Text: PDF (67 kB) The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, and A. A. Tonkikh pp. 1053-1057 Full Text: PDF (61 kB) Electronic Structure of Titanium Disulfide Nanostructures: Monolayers, Nanostripes, and Nanotubes V. V. Ivanovskaya, G. Seifert, and A. L. Ivanovskii pp. 1058-1065 Full Text: PDF (656 kB) Exciton States in Semiconductor Spherical Nanostructures S. I. Pokutnyi pp. 1066-1070 Full Text: PDF (64 kB) High-Frequency Nonlinear Response of Double-Well Nanostructures V. F. Elesin and I. Yu. Kateev pp. 1071-1075 Full Text: PDF (74 kB) Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots A. Yu. Maslov and O. V. Proshina pp. 1076-1081 Full Text: PDF (66 kB) PHYSICS OF SEMICONDUCTOR DEVICES A Millimeter–Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure D. V. Morozov, K. V. Smirnov, A. V. Smirnov, V. A. Lyakhov, and G. N. Goltsman pp. 1082-1086 Full Text: PDF (131 kB) Semiconductor WGM Lasers for the Mid-IR Spectral Range V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova, Yu. P. Yakovlev, N. S. Averkiev, A. Krier, and G. Hill pp. 1087-1092 Full Text: PDF (139 kB) Semiconductor–Insulator Structures in the Phototargets of Vidicons Sensitive in the Middle Infrared Region of the Spectrum N. F. Kovtonyuk, V. P. Misnik, and A. V. Sokolov pp. 1093-1095 Full Text: PDF (42 kB) A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density A. V. Sachenko and Yu. V. Kryuchenko pp. 1096-1101 Full Text: PDF (76 kB) A Combined Model of a Resonant-Tunneling Diode I. I. Abramov, I. A. Goncharenko, and N. V. Kolomeitseva pp. 1102-1109 Full Text: PDF (97 kB)en
dc.format.extent2759089 bytes
dc.format.extent8469 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 39en
dc.relation.ispartofseriesI. 09en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 39, I. 09en


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