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dc.date.accessioned2007-06-12T20:00:35Z
dc.date.available2007-06-12T20:00:35Z
dc.date.issued2005-07
dc.identifier.urihttp://hdl.handle.net/1951/41477
dc.descriptionSemiconductors -- July 2005 Volume 39, Issue 7, pp. 735-860 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon A. V. Oleinich-Lysyuk, B. I. Gutsulyak, and I. M. Fodchuk pp. 735-737 Full Text: PDF (54 kB) Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor–Metal Eutectic Composition G. I. Isakov pp. 738-741 Full Text: PDF (57 kB) The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev pp. 742-747 Full Text: PDF (80 kB) Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, and V. M. Ustinov pp. 748-753 Full Text: PDF (175 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Low-Temperature Instabilities of the Electrical Properties of Cd0.96Zn0.04Te:Cl Semi-insulating Crystals A. V. Savitskii, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskii, S. N. Chupyra, and N. D. Vakhnyak pp. 754-758 Full Text: PDF (79 kB) Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon E. V. Astrova, T. S. Perova, S. A. Grudinkin, V. A. Tolmachev, Yu. A. Pilyugina, V. B. Voronkov, and J. K. Vij pp. 759-767 Full Text: PDF (294 kB) Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko pp. 768-771 Full Text: PDF (59 kB) Weak Ferromagnetism in InSe:Mn Layered Crystals V. V. Slyn'ko, A. G. Khandozhko, Z. D. Kovalyuk, A. V. Zaslonkin, V. E. Slyn'ko, M. Arciszewska, and W. D. Dobrowolski pp. 772-776 Full Text: PDF (71 kB) Dispersion of the Refractive Index in Tl1 – xCuxGaSe2 (0 <= x <= 0.02) and Tl1 – xCuxInS2 (0 <= x <= 0.015) Crystals A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev pp. 777-779 Full Text: PDF (42 kB) The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals I. A. Bolshakova, V. M. Boiko, V. N. Brudnyi, I. V. Kamenskaya, N. G. Kolin, E. Yu. Makido, T. A. Moskovets, and D. I. Merkurisov pp. 780-785 Full Text: PDF (86 kB) The Electrooptic Effect and Anisotropy of the Refractive Index in Tl1 – xCuxGaSe2 (0 <= x <= 0.02) Crystals A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev pp. 786-788 Full Text: PDF (49 kB) Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese M. K. Bakhadyrkhanov, O. É. Sattarov, Kh. M. Iliev, K. S. Ayupov, and Tuérdi Umaier pp. 789-791 Full Text: PDF (51 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Specific Features of the Physical Properties of a Modified CdTe Surface V. P. Makhniy pp. 792-794 Full Text: PDF (100 kB) The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, and Yu. G. Shreter pp. 795-799 Full Text: PDF (75 kB) The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, D. V. Terin, and E. I. Khasina pp. 800-804 Full Text: PDF (74 kB) LOW-DIMENSIONAL SYSTEMS Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, and G. Sh. Petrosyan pp. 805-810 Full Text: PDF (73 kB) Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation B. A. Aronzon, D. Yu. Kovalev, and V. V. Ryl'kov pp. 811-819 Full Text: PDF (130 kB) The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. A. Tonkikh, N. A. Bert, and V. M. Ustinov pp. 820-825 Full Text: PDF (131 kB) Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field V. I. Kadushkin pp. 826-829 Full Text: PDF (62 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, V. M. Kashkarov, O. V. Kurilo, S. Yu. Turishchev, A. B. Golodenko, and É. P. Domashevskaya pp. 830-834 Full Text: PDF (79 kB) Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder N. N. Kononov, G. P. Kuz'min, A. N. Orlov, A. A. Surkov, and O. V. Tikhonevich pp. 835-839 Full Text: PDF (77 kB) Magnetic Properties of Iron-Modified Amorphous Carbon S. G. Yastrebov, V. I. Ivanov-Omskii, V. Pop, C. Morosanu, A. Slav, and J. Voiron pp. 840-844 Full Text: PDF (73 kB) Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, and V. V. Kudryavtsev pp. 845-850 Full Text: PDF (85 kB) PHYSICS OF SEMICONDUCTOR DEVICES High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil'eva, and G. V. Itkinson pp. 851-855 Full Text: PDF (96 kB) A Ferroelectric Field Effect Transistor Based on a Pb(ZrxTi1 – x)O3/SnO2 Heterostructure I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk, and I. V. Grekhov pp. 856-860 Full Text: PDF (153 kB)en
dc.format.extent2050131 bytes
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 39en
dc.relation.ispartofseriesI. 07en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 39, I. 07en


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