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dc.date.accessioned2007-06-12T19:59:19Z
dc.date.available2007-06-12T19:59:19Z
dc.date.issued2005-06
dc.identifier.urihttp://hdl.handle.net/1951/41476
dc.descriptionSemiconductors -- June 2005 Volume 39, Issue 6, pp. 609-733 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Kinetics of Defect Formation in ZnO Subjected to a Flux of Oxygen Radicals M. B. Kotlyarevsky, I. V. Rogozin, and A. V. Marakhovskii pp. 609-614 Full Text: PDF (80 kB) Specific Features of the Segregation-Related Redistribution of Phosphorus during Thermal Oxidation of Heavily Doped Silicon Layers O. V. Aleksandrov and N. N. Afonin pp. 615-622 Full Text: PDF (96 kB) Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys V. G. Deibuk and A. V. Voznyi pp. 623-628 Full Text: PDF (75 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Determination of the Concentration of Deep Levels in Semi-insulating CdS Single Crystals by Photoinduced-Current Transient Spectroscopy A. P. Odrinskii pp. 629-635 Full Text: PDF (93 kB) Determination of the Charge Carrier Concentration in Lead Selenide Polycrystalline Layers Using Reflectance Spectra A. E. Gamarts, Yu. M. Kanageeva, and V. A. Moshnikov pp. 636-637 Full Text: PDF (86 kB) Energy Parameters of Two-Electron Tin Centers in PbSe S. A. Nemov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, and É. S. Khuzhakulov pp. 638-641 Full Text: PDF (66 kB) Dynamic Chaos in a Partially Illuminated Compensated Semiconductor Under the Conditions of Impurity-Related Breakdown K. M. Jandieri, Z. S. Kachlishvili, and A. B. Stroganov pp. 642-649 Full Text: PDF (132 kB) Modulation of the Characteristics of Intense Picosecond Stimulated Emission from GaAs N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, T. A. Nalet, and S. V. Stegantsov pp. 650-657 Full Text: PDF (112 kB) Recombination Mechanism of the Piezophotoresistive Effect in Compensated Semiconductors B. M. Pavlyshenko and R. Ya. Shuvar pp. 658-660 Full Text: PDF (43 kB) Spontaneous and Stimulated UV Luminescence of ZnO:N at 77 K A. N. Georgobiani, A. N. Gruzintsev, E. E. Yakimov, C. Barthou, and P. Benalloul pp. 661-665 Full Text: PDF (71 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator A. G. Zhdan, E. I. Goldman, Yu. V. Gulyaev, and G. V. Chucheva pp. 666-673 Full Text: PDF (123 kB) Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures T. V. Blank, Yu. A. Goldberg, E. E. Zavarin, O. V. Konstantinov, and N. M. Shmidt pp. 674-678 Full Text: PDF (71 kB) LOW-DIMENSIONAL SYSTEMS The Effect of Adsorbed Molecules on the Charge-Carrier Spectrum in a Semiconductor Nanowire V. A. Lykakh and E. S. Syrkin pp. 679-684 Full Text: PDF (76 kB) Local Tunneling Spectroscopy of Silicon Nanostructures N. T. Bagraev, A. D. Bouravlev, L. E. Klyachkin, A. M. Malyarenko, W. Gehlhoff, Yu. I. Romanov, and S. A. Rykov pp. 685-696 Full Text: PDF (743 kB) Room-Temperature Electroreflectance and Reflectance of a GaAs/AlGaAs Single Quantum Well Structure A. A. Herasimovich, S. V. Shokhovets, G. Gobsch, and D. S. Domanevskii pp. 697-702 Full Text: PDF (76 kB) The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55 µm N. V. Kryzhanovskaya, A. Yu. Egorov, V. V. Mamutin, N. K. Polyakov, A. F. Tsatsul'nikov, A. R. Kovsh, N. N. Ledentsov, V. M. Ustinov, and D. Bimberg pp. 703-708 Full Text: PDF (88 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Structural Defects and Electrical Conductivity in Nanocrystalline SiC:H Films Doped with Boron and Grown by Photostimulated Chemical-Vapor Deposition O. I. Shevaleevskiy, S. Y. Myong, K. S. Lim, S. Miyajima, and M. Konagai pp. 709-711 Full Text: PDF (57 kB) PHYSICS OF SEMICONDUCTOR DEVICES The Physical Properties of CdTe Doped with V and Ge S. Yu. Paranchych, L. D. Paranchych, V. N. Makogonenko, Yu. V. Tanasyuk, M. D. Andriichuk, and V. R. Romanyuk pp. 712-715 Full Text: PDF (71 kB) A New Memory Element Based on Silicon Nanoclusters in a ZrO2 Insulator with a High Permittivity for Electrically Erasable Read-Only Memory V. A. Gritsenko, K. A. Nasyrov, D. V. Gritsenko, Yu. N. Novikov, A. L. Aseev, J. H. Lee, J.-W. Lee, and C. W. Kim pp. 716-721 Full Text: PDF (76 kB) Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe L. A. Kosyachenko, O. L. Maslyanchuk, and V. M. Sklyarchuk pp. 722-729 Full Text: PDF (134 kB) A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD E. V. Bogdanova, A. A. Volkova, A. E. Cherenkov, A. A. Lebedev, R. D. Kakanakov, L. P. Kolaklieva, G. A. Sarov, T. M. Cholakova, A. V. Kirillov, and L. P. Romanov pp. 730-733 Full Text: PDF (63 kB)en
dc.format.extent2215459 bytes
dc.format.extent7688 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 39en
dc.relation.ispartofseriesI. 06en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 39, I. 06en


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