Show simple item record

dc.date.accessioned2007-06-12T19:56:42Z
dc.date.available2007-06-12T19:56:42Z
dc.date.issued2005-04
dc.identifier.urihttp://hdl.handle.net/1951/41474
dc.descriptionSemiconductors -- April 2005 Volume 39, Issue 4, pp. 377-484 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Optical Absorption and Chromium Diffusion in ZnSe Single Crystals Yu. F. Vaksman, V. V. Pavlov, Yu. A. Nitsuk, Yu. N. Purtov, A. S. Nasibov, and P. V. Shapkin pp. 377-380 Full Text: PDF (54 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Raman Spectra of the Laser-Irradiated GaSe Single Crystals A. Baidullaeva, Z. K. Vlasenko, B. K. Dauletmuratov, L. F. Kuzan, and P. E. Mozol' pp. 381-384 Full Text: PDF (60 kB) The Electrical and Optical Properties of InAs Irradiated with Electrons (~2 MeV): The Energy Structure of Intrinsic Point Defects V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin pp. 385-394 Full Text: PDF (131 kB) The Transport and Thermoelectric Properties of Semiconducting Rhenium Silicide A. B. Filonov, A. E. Krivosheev, L. I. Ivanenko, G. Behr, J. Schumann, D. Souptel, and V. E. Borisenko pp. 395-399 Full Text: PDF (73 kB) The Effect of the Charge State of Nonequilibrium Vacancies on the Nature of Radiation Defects in n-Si Crystals T. A. Pagava pp. 400-401 Full Text: PDF (37 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 Structures I. V. Bodnar', E. S. Dmitrieva, S. E. Nikitin, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 402-405 Full Text: PDF (64 kB) Edge Photoluminescence of Single-Crystal Silicon at Room Temperature E. G. Gule, E. B. Kaganovich, I. M. Kizyak, E. G. Manoilov, and S. V. Svechnikov pp. 406-408 Full Text: PDF (41 kB) Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 409-411 Full Text: PDF (50 kB) LOW-DIMENSIONAL SYSTEMS Effects of Spatial Reproduction as a Result of the Interference of Electron Waves in Two-Dimensional Semiconductor Nanostructures with Parabolic Quantum Wells V. A. Petrov and A. V. Nikitin pp. 412-420 Full Text: PDF (208 kB) Effective Mass Anisotropy of Gamma Electrons in a GaAs/(AlGa)As Quantum Well E. E. Vdovin and Yu. N. Khanin pp. 421-428 Full Text: PDF (136 kB) A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields V. A. Gergel', Yu. V. Gulyaev, V. A. Kurbatov, and M. N. Yakupov pp. 429-431 Full Text: PDF (46 kB) The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers in CdSe/CdMgSe Superlattices I. I. Reshina, S. V. Ivanov, D. N. Mirlin, I. V. Sedova, and S. V. Sorokin pp. 432-438 Full Text: PDF (83 kB) Resonance Donor States in Quantum Wells N. A. Bekin pp. 439-447 Full Text: PDF (101 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Special Features of the Electrical Conductivity in Doped alpha-Si:H Films with Silicon Nanocrystals S. A. Arzhannikova, M. D. Efremov, G. N. Kamaev, A. V. Vishnyakov, and V. A. Volodin pp. 448-454 Full Text: PDF (130 kB) An Electron Spin Resonance Study of Copper–Carbon Systems B. P. Popov pp. 455-457 Full Text: PDF (46 kB) Influence of Pyridine Molecule Adsorption on Concentrations of Free Carriers and Paramagnetic Centers in Porous Silicon Layers L. A. Osminkina, A. S. Vorontsov, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov pp. 458-461 Full Text: PDF (72 kB) PHYSICS OF SEMICONDUCTOR DEVICES Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers N. A. Maleev, A. G. Kuz'menkov, A. E. Zhukov, A. P. Vasil'ev, A. S. Shulenkov, S. V. Chumak, E. V. Nikitina, S. A. Blokhin, M. M. Kulagina, E. S. Semenova, D. A. Livshits, M. V. Maksimov, and V. M. Ustinov pp. 462-466 Full Text: PDF (137 kB) A Study of Carrier Statistics in InGaN/GaN LED Structures D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin, A. F. Tsatsul'nikov, and N. N. Ledentsov pp. 467-471 Full Text: PDF (76 kB) Interfacial and Interband Lasing in an InAs/InAsSbP Heterostructure Grown by Vapor-Phase Epitaxy from Metal–Organic Compounds A. P. Astakhova, N. D. Il'inskaya, A. N. Imenkov, S. S. Kizhaev, S. S. Molchanov, and Yu. P. Yakovlev pp. 472-476 Full Text: PDF (84 kB) Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers I. I. Novikov, N. Yu. Gordeev, L. Ya. Karachinskii, M. V. Maksimov, Yu. M. Shernyakov, A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, S. S. Mikhrin, and N. N. Ledentsov pp. 477-480 Full Text: PDF (65 kB) Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3 µm InAs/GaAs QD Lasers I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, Yu. M. Shernyakov, E. S. Semenova, A. P. Vasil'ev, A. E. Zhukov, V. M. Ustinov, and G. G. Zegrya pp. 481-484 Full Text: PDF (61 kB)en
dc.format.extent1546110 bytes
dc.format.extent7551 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 39en
dc.relation.ispartofseriesI. 04en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 39, I. 04en


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record