Show simple item record
dc.descriptionSemiconductors -- March 2005 Volume 39, Issue 3, pp. 273-376 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Cationic Disorder in an Sr2FeMoO6 Binary Oxide with a Perovskite Structure L. S. Lobanovskii, S. V. Trukhanov, M. V. Bushinskii, and I. O. Troyanchuk pp. 273-276 Full Text: PDF (58 kB) A Vacancy Model of the Heteropolytype Epitaxy of SiC A. A. Lebedev and S. Yu. Davydov pp. 277-280 Full Text: PDF (43 kB) Internal Friction in Semiconductor Thin Films Grown Using Sol–Gel Technology A. S. Il'in, A. I. Maksimov, V. A. Moshnikov, and N. P. Yaroslavtsev pp. 281-284 Full Text: PDF (58 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Reflection Spectra of Two Polymorphic Modifications of Cadmium Arsenide A. I. Kozlov, V. V. Sobolev, and A. F. Knjazev pp. 285-288 Full Text: PDF (51 kB) Statistics of Electrons in PbS with U Centers S. A. Nemov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, and E. S. Khuzhakulov pp. 289-292 Full Text: PDF (58 kB) The Accumulation of Radiation Defects in Gallium Arsenide That Has Been Subjected to Pulsed and Continuous Ion Implantation M. V. Ardyshev, V. M. Ardyshev, and Yu. Yu. Kryuchkov pp. 293-295 Full Text: PDF (48 kB) The Effect of Pressing on the Luminescent Properties of ZnS:Ga Powders Yu. Yu. Bacherikov, N. V. Kitsyuk, S. V. Optasyuk, and A. A. Stadnik pp. 296-299 Full Text: PDF (54 kB) Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes of Carbon and Oxygen Impurities in Silicon Enriched with 28Si, 29Si, and 30Si Isotopes P. G. Sennikov, T. V. Kotereva, A. G. Kurganov, B. A. Andreev, H. Niemann, D. Schiel, V. V. Emtsev, and H.-J. Pohl pp. 300-307 Full Text: PDF (108 kB) The Effect of Tellurium Diffusion from an n-GaSb:Te Substrate on the Properties of GaInAsSb Solid Solutions Grown from Lead-Containing Melt T. I. Voronina, T. S. Lagunova, A. F. Lipaev, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev pp. 308-312 Full Text: PDF (68 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Depolarization in a Metal–p-Ferroelectric–n-Semiconductor Structure L. S. Berman pp. 313-316 Full Text: PDF (53 kB) A Model for Describing Hole Scattering at GaAs/AlAs(001) Heterointerfaces G. F. Karavaev and V. N. Chernyshov pp. 317-324 Full Text: PDF (100 kB) A Quasi-Classical Description of the Conductivity Oscillations in Layered Crystals Under the Condition of Charge-Carrier Scattering by Acoustic Phonons P. V. Gorskii pp. 325-330 Full Text: PDF (68 kB) The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se2 Structures G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 331-335 Full Text: PDF (87 kB) Vegard's Law and Superstructural Phases in AlxGa1 – xAs/GaAs(100) Epitaxial Heterostructures É. P. Domashevskaya, P. V. Seredin, É. A. Dolgopolova, I. E. Zanin, I. N. Arsent'ev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov pp. 336-342 Full Text: PDF (176 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Atmospheric Adsorption Effects in Hot-Wire Chemical-Vapor-Deposition Microcrystalline Silicon Films with Different Electrode Configurations S. K. Persheyev, V. Smirnov, K. A. O'Neill, S. Reynolds, and M. J. Rose pp. 343-346 Full Text: PDF (55 kB) The Role of Boron Impurity in the Activation of Free Charge Carriers in Layers of Porous Silicon during the Adsorption of Acceptor Molecules L. A. Osminkina, E. A. Konstantinova, K. S. Sharov, P. K. Kashkarov, and V. Yu. Timoshenko pp. 347-350 Full Text: PDF (62 kB) The Density of States in the Mobility Gap of Amorphous Hydrogenated Silicon Doped with Erbium A. V. Biryukov, A. G. Kazanskii, E. I. Terukov, and K. Yu. Khabarova pp. 351-353 Full Text: PDF (56 kB) PHYSICS OF SEMICONDUCTOR DEVICES A New Physical Mechanism for the Formation of Critical Turn-On Charge in Thyristor Structures T. T. Mnatsakanov, S. N. Yurkov, and A. G. Tandoev pp. 354-359 Full Text: PDF (76 kB) A Method for Measuring the Lifetime of Charge Carriers in the Base Regions of High-Speed Diode Structures V. V. Togatov and P. A. Gnatyuk pp. 360-363 Full Text: PDF (58 kB) Spectrometry of Short-Range Ions Using Detectors Based on 4H-SiC Films Grown by Chemical Vapor Deposition N. B. Strokan, A. M. Ivanov, E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, and G. N. Violina pp. 364-369 Full Text: PDF (84 kB) High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. V. Murashova, D. N. Nikolaev, A. L. Stankevich, M. A. Khomylev, V. V. Shamakhov, A. Yu. Leshko, A. V. Lyutetskii, T. A. Nalyot, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, and I. S. Tarasov pp. 370-373 Full Text: PDF (112 kB) BOOK REVIEW A Review of the Book Atomy legiruyushchikh primesei v poluprovodnikakh (Atoms of Doping Impurities in Semiconductors) by V.I. Fistul' (Moscow: Fizmatlit, 2004) pp. 374-376 Full Text: PDF (23 kB)en
dc.format.extent1364548 bytes
dc.format.extent8005 bytes
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 39en
dc.relation.ispartofseriesI. 03en
dc.titleSemiconductors V. 39, I. 03en

Files in this item


This item appears in the following Collection(s)

Show simple item record