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dc.date.accessioned2007-06-12T19:47:17Z
dc.date.available2007-06-12T19:47:17Z
dc.date.issued2004-11
dc.identifier.urihttp://hdl.handle.net/1951/41469
dc.descriptionSemiconductors -- November 2004 Volume 38, Issue 11, pp. 1241-1363 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effects of Pressure and Hydrogen on the Formation of Vacancies and Divacancies in Crystalline Silicon V. G. Zavodinsky, A. A. Gnidenko, A. Misiuk, and J. Bak-Misiuk pp. 1241-1244 Full Text: PDF (50 kB) (IV2)1 – x(III–V)x Solid Solutions Obtained from a Bounded Tin Melt–Solution B. Sapaev, M. S. Saidov, A. S. Saidov, and S. Zh. Karazhanov pp. 1245-1253 Full Text: PDF (382 kB) Atomic-Force-Microscopy Visualization of Si Nanocrystals in SiO2 Thermal Oxide Using Selective Etching M. S. Dunaevskii, J. J. Grob, A. G. Zabrodskii, R. Laiho, and A. N. Titkov pp. 1254-1259 Full Text: PDF (256 kB) On the High-Dose Effect in the Case of Ion Implantation of Silicon D. I. Tetelbaum and A. I. Gerasimov pp. 1260-1262 Full Text: PDF (29 kB) A Mechanism of Low-Temperature Stimulated Processes in Plasma Anodization of Metals and Semiconductors A. P. Bibilashvili and A. B. Gerasimov pp. 1263-1266 Full Text: PDF (45 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals V. V. Krivolapchuk, Yu. V. Kozhanova, V. V. Lundin, M. M. Mezdrogina, S. N. Rodin, and Sh. A. Yusupova pp. 1267-1274 Full Text: PDF (110 kB) Effect of Proton Radiation on the Kinetics of Phosphorescence Decay in the Ceramic Material ZnS–Cu T. A. Kuchakova, G. V. Vesna, and V. A. Makara pp. 1275-1279 Full Text: PDF (58 kB) Photosensitivity of Thin Films of Semiconductor Nanocomposites Based on Metal–Organic Complexes with Cu+ and Ru2+ E. L. Aleksandrova and N. N. Khimich pp. 1280-1283 Full Text: PDF (130 kB) A Mechanism of Charge-Carrier Photogeneration in Polyamidine Supramolecular Structures E. L. Aleksandrova, M. M Dudkina, and A. V. Ten'kovtsev pp. 1284-1290 Full Text: PDF (84 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Photosensitive Structures Based on HgGa2S4 Single Crystals: Preparation and Properties V. Yu. Rud', Yu. V. Rud', B. Kh. Bairamov, G. A. Il'chuk, V. O. Ukrainets, N. Fernelius, and P. G. Shunemann pp. 1291-1297 Full Text: PDF (121 kB) Effect of Modifying a Bi Nanolayer on the Charge Transport in Sb–n-Si–Bi–Ge33As12Se55–Sb Heterostructures A. B. Kondrat, N. I. Popovich, and N. I. Dovgoshej pp. 1298-1301 Full Text: PDF (52 kB) The Effect of a Thermoelectric Field on a Current–Voltage Characteristic of the p-Ge–n-GaAs Heterojunction M. M. Gadzhialiev, Z. Sh. Pirmagomedov, and T. N. Éfendieva pp. 1302-1303 Full Text: PDF (35 kB) The Effect of gamma-Ray Radiation on the Characteristics of the Interface between Silicon and Lead–Borosilicate Glass P. B. Parchinckii, S. I. Vlasov, and A. A. Nasirov pp. 1304-1307 Full Text: PDF (61 kB) Photoelectric Properties of ZnO/CuPc/Si Structures G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 1308-1311 Full Text: PDF (68 kB) LOW-DIMENSIONAL SYSTEMS Transformation Kinetics of Electric Field Domains in Weakly Coupled GaAs/AlGaAs Superlattices in a Transverse Electric Field Yu. A. Mityagin, V. N. Murzin, Yu. A. Efimov, A. A. Pishchulin, and V. N. Pyrkov pp. 1312-1315 Full Text: PDF (168 kB) Vibration Modes and Electron-Phonon Interaction in Semiconductor Nanotubes A. I. Vedernikov and A. V. Chaplik pp. 1316-1322 Full Text: PDF (84 kB) MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility V. V. Lundin, E. E. Zavarin, A. I. Besulkin, A. G. Gladyshev, A. V. Sakharov, M. F. Kokorev, N. M. Shmidt, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, and R. Kakanakov pp. 1323-1325 Full Text: PDF (45 kB) Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping G. B. Galiev, V. É. Kaminskii, I. S. Vasil'evskii, V. A. Kul'bachinskii, and R. A. Lunin pp. 1326-1331 Full Text: PDF (78 kB) Formation of Two- and One-Dimensional Solid-Phase Quantum Nanostructures in the CdHgTe–Electrolyte System V. B. Bozhevolnov, A. M. Yafyasov, and P. P. Konorov pp. 1332-1339 Full Text: PDF (181 kB) Laser-Induced Resonant Electron Transitions in a Structure with Three Quantum Dots A. V. Tsukanov pp. 1340-1343 Full Text: PDF (56 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Effect of Adsorption of the Donor and Acceptor Molecules at the Surface of Porous Silicon on the Recombination Properties of Silicon Nanocrystals E. A. Konstantinova, Yu. V. Ryabchikov, L. A. Osminkina, A. S. Vorontsov, and P. K. Kashkarov pp. 1344-1349 Full Text: PDF (81 kB) PHYSICS OF SEMICONDUCTOR DEVICES Nonlinear Frequency Conversion in a Double Vertical-Cavity Surface-Emitting Laser Yu. A. Morozov, I. S. Nefedov, and V. Ya. Aleshkin pp. 1350-1355 Full Text: PDF (86 kB) Properties of GaSb-Based LEDs with Grid Ohmic Contacts A. N. Imenkov, E. A. Grebenshchikova, B. E. Zhurtanov, T. N. Danilova, M. A. Sipovskaya, N. V. Vlasenko, and Yu. P. Yakovlev pp. 1356-1363 Full Text: PDF (98 kB)en
dc.format.extent2152100 bytes
dc.format.extent8092 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 38en
dc.relation.ispartofseriesI. 11en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 38, I. 11en


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