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dc.descriptionSemiconductors -- September 2004 Volume 38, Issue 9, pp. 987-1114 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Certain Features of Ga Diffusion in ZnS Powders Yu. Yu. Bacherikov, I. P. Vorona, S. V. Optasyuk, V. E. Rodionov, and A. A. Stadnik pp. 987-991 Full Text: PDF (63 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Impact-Ionization Autosolitons in Compensated Silicon A. M. Musaev pp. 992-995 Full Text: PDF (50 kB) Effect of Vacuum Annealing on the Edge Luminescence of Undoped Zinc Selenide V. P. Makhnii, A. M. Sletov, and I. V. Tkachenko pp. 996-997 Full Text: PDF (39 kB) Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure N. M. Shmidt, M. E. Levinshtein, W. V. Lundin, A. I. Besyul'kin, P. S. Kop'ev, S. L. Rumyantsev, N. Pala, and M. S. Shur pp. 998-1000 Full Text: PDF (49 kB) Elementary Blue-Emission Bands in the Luminescence Spectrum of Undoped Gallium Nitride Films A. N. Gruzintsev, A. N. Red'kin, V. I. Tatsii, C. Barthou, and P. Benalloul pp. 1001-1004 Full Text: PDF (55 kB) Determination of the Minority-Carrier Lifetime in Silicon Ingots by Photoconductivity Relaxation Measured at Microwave Frequencies P. A. Borodovskii, A. F. Buldygin, and A. S. Tokarev pp. 1005-1011 Full Text: PDF (101 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Interfaces and Roughness in a Multilayer Silicon Structure A. I. Belyaeva, A. A. Galuza, and S. N. Kolomiets pp. 1012-1017 Full Text: PDF (246 kB) Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties G. A. Il'chuk, N. V. Klimova, O. I. Kon'kov, S. E. Nikitin, Yu. A. Nikolaev, L. I. Rudaya, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, V. V. Shamanin, and T. A. Yurre pp. 1018-1022 Full Text: PDF (80 kB) Interaction of C60 Molecules with the (100)W Surface: Adsorption, Initial Stages of Film Growth, and Thermal Transformation of the Adsorption Layer N. R. Gall', E. V. Rut'kov, and A. Ya. Tontegode pp. 1023-1029 Full Text: PDF (96 kB) Radiative Recombination in a Silicon MOS Tunnel Structure N. Asli, M. I. Vexler, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, and A. F. Shulekin pp. 1030-1035 Full Text: PDF (97 kB) Potential Barrier Formation at a Metal–Semiconductor Contact Using Selective Removal of Atoms B. A. Gurovich, B. A. Aronzon, V. V. Ryl'kov, E. D. Ol'shanskii, E. A. Kuleshova, D. I. Dolgii, D. Yu. Kovalev, and V. I. Filippov pp. 1036-1040 Full Text: PDF (102 kB) Special Features of Radiation-Defect Annealing in Silicon p–n Structures: The Role of Fe Impurity Atoms B. A. Komarov pp. 1041-1046 Full Text: PDF (80 kB) LOW-DIMENSIONAL SYSTEMS Electrical Properties of Metal–Semiconductor Nanocontacts N. V. Vostokov and V. I. Shashkin pp. 1047-1052 Full Text: PDF (71 kB) Effect of Electron–Electron and Electron–Hole Collisions on Intraband Population Inversion of Electrons in Stepped Quantum Wells V. L. Zerova, G. G. Zegrya, and L. E. Vorob'ev pp. 1053-1060 Full Text: PDF (107 kB) Calculation of Current–Voltage Characteristics of Gallium Arsenide Symmetric Double-Barrier Resonance Tunneling Structures with Allowance for the Destruction of Electron-Wave Coherence in Quantum Wells D. V. Pozdnyakov, V. M. Borzdov, and F. F. Komarov pp. 1061-1064 Full Text: PDF (54 kB) Relaxation of Charge Carriers in Quantum Dots with the Involvement of Plasmon–Phonon Modes A. V. Fedorov and A. V. Baranov pp. 1065-1073 Full Text: PDF (112 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Influence of Supramolecular Ordering on Photophysical Properties of Polyamidines E. L. Aleksandrova, M. E. Kompan, M. M. Dudkina, A. V. Tenkovtsev, and E. I. Terukov pp. 1074-1077 Full Text: PDF (61 kB) Current Instability with an S-Shaped I–V Characteristic in Films of a Metal–Polymer Complex of Polyamide Acid with Tb+2 É. A. Lebedev, M. Ya. Goikhman, K. D. Tséndin, I. V. Podeshvo, E. I. Terukov, and V. V. Kudryavtsev pp. 1078-1080 Full Text: PDF (41 kB) Carrier Drift Mobility in Porous Silicon Carbide L. P. Kazakova, M. G. Mynbaeva, and K. D. Mynbaev pp. 1081-1083 Full Text: PDF (39 kB) Quartz Microtubes Based on Macroporous Silicon E. V. Astrova, T. N. Borovinskaya, T. S. Perova, and M. V. Zamoryanskaya pp. 1084-1087 Full Text: PDF (348 kB) Technique for Patterning Macroporous Silicon and the Fabrication of Bars of 2D Photonic Crystals with Vertical Walls E. V. Astrova, T. N. Borovinskaya, V. A. Tolmachev, and T. S. Perova pp. 1088-1091 Full Text: PDF (376 kB) PHYSICS OF SEMICONDUCTOR DEVICES A Study of Deep Levels in CdHgTe by Analyzing the Tunneling Current of Photodiodes V. I. Turinov pp. 1092-1098 Full Text: PDF (106 kB) Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov, S. V. Ivanov, P. S. Kop'ev, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubelevich, A. L. Gurskii, G. P. Yablonskii, Y. Dikme, H. Kalisch, A. Szymakowski, R. H. Jansen, B. Schineller, and M. Heuken pp. 1099-1104 Full Text: PDF (90 kB) Characteristics of Planar Diodes Based on Heavily Doped GaAs/AlAs Superlattices in the Terahertz Frequency Region D. G. Pavel'ev, N. V. Demarina, Yu. I. Koshurinov, A. P. Vasil'ev, E. S. Semenova, A. E. Zhukov, and V. M. Ustinov pp. 1105-1110 Full Text: PDF (89 kB) Behavior of Graded-Gap Detectors of Ionizing Radiation under Irradiation with Alpha Particles L. Dapkus, K. Pozela, J. Pozela, A. Silenas, V. Juciene, and V. Jasutis pp. 1111-1114 Full Text: PDF (59 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 38en
dc.relation.ispartofseriesI. 09en
dc.titleSemiconductors V. 38, I. 09en

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