Show simple item record
dc.descriptionSemiconductors -- July 2004 Volume 38, Issue 7, pp. 737-861 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Interphase Interactions and Features of Structural Relaxation in TiBx–n-GaAs (InP, GaP, 6H-SiC) Contacts Subjected to Active Treatment N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudrik, O. S. Litvin, P. M. Litvin, and V. V. Milenin pp. 737-741 Full Text: PDF (392 kB) Local Symmetry of the Pb1 – xSnxSe Lattice near the Zero-Gap State E. S. Khuzhakulov pp. 742-744 Full Text: PDF (54 kB) Promotion of Metallurgical Reactions at the Ni–SiC Interface by Irradiation with Protons V. V. Kozlovskii, P. A. Ivanov, D. S. Rumyantsev, V. N. Lomasov, and T. P. Samsonova pp. 745-750 Full Text: PDF (75 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Study of the Electrical Properties of CdxHg1 – xTe P. V. Biryulin, V. I. Kosheleva, and V. I. Turinov pp. 751-757 Full Text: PDF (98 kB) Formation of Electrically Active Centers in Silicon Irradiated with Electrons and Then Annealed at Temperatures of 400–700°C E. P. Neustroev, S. A. Smagulova, I. V. Antonova, and L. N. Safronov pp. 758-762 Full Text: PDF (64 kB) The Role of Trapping Levels of Nonequilibrium Electrons during the Formation of Pinning Centers for Domain Walls in the Magnetic Semiconductor CdCr2Se4 A. A. Abdullaev pp. 763-768 Full Text: PDF (78 kB) Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons V. N. Brudnyi, V. M. Boiko, I. V. Kamenskaya, and N. G. Kolin pp. 769-774 Full Text: PDF (97 kB) Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon D. I. Tetelbaum, E. I. Zorin[dagger], and N. V. Lisenkova pp. 775-777 Full Text: PDF (35 kB) Specific Thermoelectric Properties of Lightly Doped Bi2(TeSe)3 Solid Solutions P. P. Konstantinov, L. V. Prokof'eva, Yu. I. Ravich, M. I. Fedorov, and V. V. Kompaniets pp. 778-781 Full Text: PDF (63 kB) Specific Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: II. Analysis of the Width and Shape of Lines A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and E. N. Mokhov pp. 782-787 Full Text: PDF (83 kB) Localization of a Longitudinal Autosoliton in InSb I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev pp. 788-790 Full Text: PDF (68 kB) Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV A. A. Gutkin and M. A. Reshchikov pp. 791-795 Full Text: PDF (67 kB) Hysteresis in Ag2Te near and within the Phase Transition Region S. A. Aliev pp. 796-799 Full Text: PDF (60 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Resistance of Proton-Irradiated GaAs Photodetectors to Combined Gamma and Neutron Radiation A. V. Murel', S. V. Obolenskii, A. G. Fefelov, and E. V. Kiseleva pp. 800-806 Full Text: PDF (83 kB) Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons N. B. Strokan, A. M. Ivanov, N. S. Savkina, A. A. Lebedev, V. V. Kozlovskii, M. Syvajarvi, and R. Yakimova pp. 807-811 Full Text: PDF (77 kB) LOW-DIMENSIONAL SYSTEMS Nonlinear Properties of Phototropic Media on the Basis of CuxSe Nanoparticles in Quartz Glass S. A. Zolotovskaya, N. N. Posnov, P. V. Prokosin, K. V. Yumashev, V. S. Gurin, and A. A. Alexeenko pp. 812-817 Full Text: PDF (90 kB) Radiative Recombination in Ge+-Implanted SiO2 Films Annealed under Hydrostatic Pressure I. E. Tyschenko and L. Rebohle pp. 818-823 Full Text: PDF (91 kB) The Effect of Acoustic Phonon Confinement on Electron Scattering in GaAs/AlxGa1 – xAs Superlattices S. I. Borisenko pp. 824-829 Full Text: PDF (75 kB) Kapitsa Effect in Crystals with Superlattices P. V. Gorskii pp. 830-832 Full Text: PDF (39 kB) Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an InxGa1 – xAs Matrix on a GaAs Substrate N. V. Kryzhanovskaya, A. G. Gladyschev, S. A. Blokhin, Yu. G. Musikhin, A. E. Zhukov, M. V. Maksimov, N. D. Zakharov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. Werner, F. Guffart, and D. Bimberg pp. 833-836 Full Text: PDF (182 kB) Mechanism of Dicke Superradiance in Semiconductor Heterostructures L. Ya. Karachinsky, I. I. Novikov, N. Yu. Gordeev, and G. G. Zegrya pp. 837-841 Full Text: PDF (66 kB) Manifestation of Size-Related Quantum Oscillations of the Radiative Exciton Recombination Time in the Photoluminescence of Silicon Nanostructures A. V. Sachenko, Yu. V. Kryuchenko, I. O. Sokolovskii, and O. M. Sreseli pp. 842-848 Full Text: PDF (93 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Ultraviolet Luminescence of ZnO Infiltrated into an Opal Matrix V. M. Masalov, É. N. Samarov, G. I. Volkodav[dagger], G. A. Emel'chenko, A. V. Bazhenov, S. I. Bozhko, I. A. Karpov, A. N. Gruzintsev, and E. E. Yakimov pp. 849-854 Full Text: PDF (98 kB) PHYSICS OF SEMICONDUCTOR DEVICES Leakage Currents over the Surface of CdHgTe-Based Photodiodes P. V. Biryulin, V. I. Turinov, and E. B. Yakimov pp. 855-861 Full Text: PDF (162 kB)en
dc.format.extent2062594 bytes
dc.format.extent8555 bytes
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 38en
dc.relation.ispartofseriesI. 07en
dc.titleSemiconductors V. 38, I. 07en

Files in this item


This item appears in the following Collection(s)

Show simple item record