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dc.descriptionSemiconductors -- May 2004 Volume 38, Issue 5, pp. 495-614 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Dependence of Dicarbon Annealing Temperature in n-Si on Oxygen Concentration in the Crystal N. I. Boyarkina and S. A. Smagulova pp. 495-498 Full Text: PDF (51 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Equilibrium Characteristics and Low-Temperature Photoluminescence of CdTe:Pb Single Crystals A. V. Savitsky, O. A. Parfenyuk, M. I. Ilashchuk, A. I. Savchuk, and S. N. Chupyra pp. 499-504 Full Text: PDF (78 kB) Electrical Properties of Layered FeGaInS4 Single Crystals N. N. Niftiev pp. 505-506 Full Text: PDF (35 kB) Features of Thermal Radiation of Plane-Parallel Semiconductor Wafers K. Yu. Guga, A. G. Kollyukh, A. I. Liptuga, V. A. Morozhenko, and V. I. Pipa pp. 507-511 Full Text: PDF (88 kB) Nonlinear Absorption of Light by Zn0.37Cd0.63Se Solid Solutions A. Baidullaeva, A. I. Vlasenko, P. E. Mozol', and L. F. Shcherbonos pp. 512-513 Full Text: PDF (41 kB) Mobility of Minority Charge Carriers in p-HgCdTe Films V. S. Varavin, S. A. Dvoretskii, V. Ya. Kostyuchenko, V. N. Ovsyuk, and D. Yu. Protasov pp. 514-519 Full Text: PDF (85 kB) Optical Properties of Synthetic Diamond Single Crystals A. V. Mudryi, T. P. Larionova, I. A. Shakin, G. A. Gusakov, G. A. Dubrov, and V. V. Tikhonov pp. 520-523 Full Text: PDF (61 kB) Phase Conjugation on the Surface of Optically Excited ZnO A. N. Gruzintsev and V. T. Volkov pp. 524-527 Full Text: PDF (49 kB) Paramagnetic Structural Defects and Conductivity in Hydrogenated Nanocrystalline Carbon-Doped Silicon Films O. I. Shevaleevskii, A. A. Tsvetkov, L. L. Larina, S. Y. Myong, and K. S. Lim pp. 528-530 Full Text: PDF (52 kB) Electrical Properties of MnIn2Se4 N. N. Niftiev, M. A. Alidzhanov, O. B. Tagiev, F. M. Mamedov, and M. B. Muradov pp. 531-532 Full Text: PDF (44 kB) Plasmon–Phonon–Polaritons in p-Doped Bi–Sb Alloys N. P. Stepanov pp. 533-536 Full Text: PDF (52 kB) MOCVD Growth and Mg-Doping of InAs Layers T. I. Voronina, T. S. Lagunova, S. S. Kizhayev, S. S. Molchanov, B. V. Pushnyi, and Yu. P. Yakovlev pp. 537-542 Full Text: PDF (87 kB) Coefficients of Capture of Free Excitons by Shallow Acceptors and Donors in Gallium Arsenide K. D. Glinchuk, N. M. Litovchenko, and O. N. Strilchuk pp. 543-545 Full Text: PDF (51 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Variation in the Built-in Potential of a Photodiode Based on an n-InSe–p-GaSe Heterojunction in the Course of Aging S. I. Drapak, V. B. Orletskii, and Z. D. Kovalyuk pp. 546-549 Full Text: PDF (55 kB) On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures A. V. Sachenko, A. P. Gorban', and V. P. Kostylyov pp. 550-553 Full Text: PDF (56 kB) Theory of Tunneling Current in Metal–Semiconductor Contacts with Subsurface Isotype delta-Doping V. I. Shashkin and A. V. Murel pp. 554-559 Full Text: PDF (84 kB) LOW-DIMENSIONAL SYSTEMS Geometric Structure and Spectral Characteristics of Electronic States in Silicon Nanoparticles S. I. Kurganskii and N. A. Borsch pp. 560-564 Full Text: PDF (143 kB) Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures V. F. Agekyan, Yu. A. Stepanov, I. Akai, T. Karasava, L. E. Vorob'ev, D. A. Firsov, A. E. Zhukov, V. M. Ustinov, A. Zeilmeyer, S. Shmidt, S. Hanna, and E. Zibik pp. 565-571 Full Text: PDF (102 kB) Properties of Self-Organized SiGe Nanostructures Formed by Ion Implantation Yu. N. Parkhomenko, A. I. Belogorokhov, N. N. Gerasimenko, A. V. Irzhak, and M. G. Lisachenko pp. 572-575 Full Text: PDF (154 kB) Vertical Transport of Hot Electrons in GaAs/AlAs Superlattices D. N. Mirlin, V. F. Sapega, and V. M. Ustinov pp. 576-580 Full Text: PDF (61 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Interaction of Infrared Radiation with Free Carriers in Mesoporous Silicon L. A. Osminkina, E. V. Kurepina, A. V. Pavlikov, V. Yu. Timoshenko, and P. K. Kashkarov pp. 581-587 Full Text: PDF (94 kB) Photoconductivity of Polymer Compositions with a High Content of Organic Dyes N. A. Davidenko, A. A. Ishchenko, L. I. Kostenko, N. G. Kuvshinsky, D. D. Mysyk, and R. D. Mysyk pp. 588-593 Full Text: PDF (83 kB) Tensoresistive Effect in Porous Silicon Layers with Different Morphology S. P. Zimin and A. N. Bragin pp. 594-597 Full Text: PDF (50 kB) ESR Studies of Nanocrystalline Silicon Films Obtained by Pulsed Laser Ablation of Silicon Targets V. Ya. Bratus, S. M. Okulov, É. B. Kaganovich, I. M. Kizyak, and É. G. Manoilov pp. 598-602 Full Text: PDF (65 kB) Specific Features of Electrical Transport in Anisotropically Nanostructured Silicon P. A. Forsh, L. A. Osminkina, V. Yu. Timoshenko, and P. K. Kashkarov pp. 603-606 Full Text: PDF (56 kB) PHYSICS OF SEMICONDUCTOR DEVICES Low-Threshold 1.3-µm Injection Lasers Based on Single InGaAsN Quantum Wells V. A. Odnoblyudov, A. Yu. Egorov, M. M. Kulagina, N. A. Maleev, Yu. M. Shernyakov, E. V. Nikitina, and V. M. Ustinov pp. 607-609 Full Text: PDF (51 kB) Kinetics of Electroluminescence in an Efficient Silicon Light-Emitting Diode with Thermally Stable Spectral Characteristics A. M. Emel'yanov, Yu. A. Nikolaev, N. A. Sobolev, and T. M. Mel'nikova pp. 610-614 Full Text: PDF (74 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 38en
dc.relation.ispartofseriesI. 05en
dc.titleSemiconductors V. 38, I. 05en

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