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dc.descriptionSemiconductors -- January 2004 Volume 38, Issue 1, pp. 1-124 REVIEW Theory of Threshold Characteristics of Semiconductor Quantum Dot Lasers L. V. Asryan and R. A. Suris pp. 1-22 Full Text: PDF (261 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS The Evolution of Surface Structures in p-CdTe Crystals under Pulsed Laser Irradiation A. Baidullaeva, M. B. Bulakh, A. I. Vlasenko, A. V. Lomovtsev, and P. E. Mozol' pp. 23-26 Full Text: PDF (242 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Fermi Level Pinning and Negative Magnetoresistance in PbTe:(Mn, Cr) A. V. Morozov, A. E. Kozhanov, A. I. Artamkin, E. I. Slyn'ko, V. E. Slyn'ko, W. D. Dobrovolski, T. Story, and D. R. Khokhlov pp. 27-30 Full Text: PDF (52 kB) Green Luminescence Band of Zinc Oxide Films Copper-Doped by Thermal Diffusion Ya. I. Alivov, M. V. Chukichev, and V. A. Nikitenko pp. 31-35 Full Text: PDF (60 kB) Transformation of Luminescence Centers in CVD ZnS Films Subjected to a High Hydrostatic Pressure N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, É. V. Yashina, and V. B. Ikonnikov pp. 36-41 Full Text: PDF (82 kB) The Influence of Impurities on Radiative Recombination via EL2 Centers in Gallium Arsenide Single Crystals M. B. Litvinova pp. 42-47 Full Text: PDF (80 kB) Structurally Complex Two-Hole and Two-Electron Slow Traps with Bikinetic Properties in p-ZnTe and n-ZnS Crystals M. A. Rizakhanov, E. M. Zobov, and M. M. Khamidov pp. 48-55 Full Text: PDF (109 kB) Universal Analytical Approximation of the Carrier Mobility in Semiconductors for a Wide Range of Temperatures and Doping Densities T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, and S. N. Yurkov pp. 56-60 Full Text: PDF (66 kB) Effect of Hydrogen on the Electronic Structure and Properties of Boron Nitrides S. E. Kul'kova, D. V. Chudinov, and D. V. Khanin pp. 61-67 Full Text: PDF (161 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Diffusion of Zinc into InP with an Unprotected Surface V. F. Andrievskii, E. V. Gushchinskaya, and S. A. Malyshev pp. 68-71 Full Text: PDF (73 kB) Donor Compensation in the Depletion Layer of CdF2 Crystals with a Schottky Barrier A. S. Shcheulin, A. K. Kupchikov, A. E. Angervaks, and A. I. Ryskin pp. 72-77 Full Text: PDF (86 kB) Formation of Ohmic Contacts on Semi-Insulating GaAs by Laser Deposition of In V. Kazlauskiene, V. Kazukauskas, J. Miskinis, A. Petravicius, R. Puras, S. Sakalauskas, J. Sinius, J.-V. Vaitkus, and A. Zindulis pp. 78-81 Full Text: PDF (102 kB) The Investigation of Structural Perfection of CdxHg1 – xTe/CdZnTe Epitaxial Layers by the Raman Scattering Method A. I. Belogorokhov, I. A. Denisov, N. A. Smirnova, and L. I. Belogorokhova pp. 82-90 Full Text: PDF (103 kB) LOW-DIMENSIONAL SYSTEMS Electron Transfer between Semiconductor Quantum Dots via Laser-Induced Resonance Transitions A. V. Tsukanov and L. A. Openov pp. 91-98 Full Text: PDF (100 kB) Recombination Statistics and Kinetics in Semiconductor Nanostructures A. V. Sachenko and Yu. V. Kryuchenko pp. 99-106 Full Text: PDF (97 kB) Formation of Nanocrystalline Silicon Films Using High-Dose H+ Ion Implantation into Silicon-on-Insulator Layers with Subsequent Rapid Thermal Annealing I. E. Tyschenko, V. P. Popov, A. B. Talochkin, A. K. Gutakovskii, and K. S. Zhuravlev pp. 107-112 Full Text: PDF (142 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS The Effect of a Au Impurity on the Photoluminescence of Porous Si and Photovoltage on Porous-Si Structures E. F. Venger, S. I. Kirillova, I. M. Kizyak, É. G. Manoilov, and V. E. Primachenko pp. 113-119 Full Text: PDF (101 kB) Effect of a Fullerene Coating on the Photoluminescence of Porous Silicon O. M. Sreseli, D. N. Goryachev, L. V. Belyakov, S. P. Vul', I. B. Zakharova, and E. A. Alekseeva pp. 120-123 Full Text: PDF (51 kB) PERSONALIA Émmanuil Il'ich Adirovich (On the 30th Anniversary of His Death) p. 124 Full Text: PDF (7 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 38en
dc.relation.ispartofseriesI. 01en
dc.titleSemiconductors V. 38, I. 01en

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