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dc.date.accessioned2007-06-12T19:17:44Z
dc.date.available2007-06-12T19:17:44Z
dc.date.issued2003-10
dc.identifier.urihttp://hdl.handle.net/1951/41456
dc.descriptionSemiconductors -- October 2003 Volume 37, Issue 10, pp. 1127-1242 REVIEW Modification of Hg1 – xCdxTe Properties by Low-Energy Ions K. D. Mynbaev and V. I. Ivanov-Omskii pp. 1127-1150 Full Text: PDF (272 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamic Stability of GaInSb, InAsSb, and GaInP Epitaxial Films V. G. Deibuk pp. 1151-1155 Full Text: PDF (66 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Kinetics of Ambipolar Diffusion and Drift Currents of Nonequilibrium Carriers in Semiconductors A. A. Abdullaev, A. R. Aliev, and I. K. Kamilov pp. 1156-1159 Full Text: PDF (71 kB) A Study of Linear Dichroism Induced by Uniaxial Strain in Silicon Crystals E. F. Venger, I. E. Matyash, and B. K. Serdega pp. 1160-1164 Full Text: PDF (60 kB) Photoluminescence from Amorphous Carbon Grown by Laser Ablation of Graphite S. G. Yastrebov, V. I. Ivanov-Omskii, and A. Richter pp. 1165-1168 Full Text: PDF (66 kB) SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES Photodeposition of Silver at the Interface of a Heterojunction Based on a Solid Electrolyte: The Case of CdSe–As2S3:Agx (x = 0.9–2.4) Heterojunctions A. I. Stetsun pp. 1169-1176 Full Text: PDF (116 kB) Formation of a Native-Oxide Structure on the Surface of n-GaAs under Natural Oxidation in Air N. A. Torkhov pp. 1177-1184 Full Text: PDF (479 kB) Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface K. D. Moiseev, M. P. Mikhailova, Yu. P. Yakovlev, I. Oswald, E. Hulicius, J. Pangrac, and T. Simecek pp. 1185-1189 Full Text: PDF (74 kB) LOW-DIMENSIONAL SYSTEMS Resonance Raman Scattering in Ge Nanoislands Grown on a Si(111) Substrate Coated with an Ultrathin SiO2 Layer V. A. Volodin, M. D. Efremov, A. I. Nikiforov, D. A. Orekhov, O. P. Pchelyakov, and V. V. Ul'yanov pp. 1190-1194 Full Text: PDF (66 kB) Electronic Absorption of Surface Acoustic Waves by Quantum Rings in a Magnetic Field V. M. Kovalev and A. V. Chaplik pp. 1195-1200 Full Text: PDF (84 kB) Characteristics of Multiple-Island Single-Electron Chains in Relation to Various Factors I. I. Abramov, S. A. Ignatenko, and E. G. Novik pp. 1201-1204 Full Text: PDF (59 kB) The X+ Trion in a System with Spatial Separation of the Charge Carriers R. A. Sergeev and R. A. Suris pp. 1205-1210 Full Text: PDF (71 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Spectral Ellipsometry of Amorphous Hydrogenated Carbon Grown by Magnetron Sputtering of Graphite S. G. Yastrebov, M. Garriga, M. I. Alonso, and V. I. Ivanov-Omskii pp. 1211-1213 Full Text: PDF (49 kB) Transient Photocurrent and Photoluminescence in Porous Silicon N. S. Averkiev, L. P. Kazakova, Yu. P. Piryatinskii, and N. N. Smirnova pp. 1214-1216 Full Text: PDF (52 kB) PHYSICS OF SEMICONDUCTOR DEVICES Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields V. G. Mokerov, Yu. K. Pozela, and Yu. V. Fedorov pp. 1217-1221 Full Text: PDF (73 kB) Silicon-on-Insulator Nanotransistors: Prospects and Problems of Fabrication O. V. Naumova, I. V. Antonova, V. P. Popov, Yu. V. Nastaushev, T. A. Gavrilova, L. V. Litvin, and A. L. Aseev pp. 1222-1228 Full Text: PDF (246 kB) Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers E. V. Kalinina, G. F. Kholuyanov, D. V. Davydov, A. M. Strel'chuk, A. Hallén, A. O. Konstantinov, V. V. Luchinin, and A. Yu. Nikiforov pp. 1229-1233 Full Text: PDF (76 kB) Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors N. A. Maleev, A. P. Kovsh, A. E. Zhukov, A. P. Vasil'ev, S. S. Mikhrin, A. G. Kuz'menkov, D. A. Bedarev, Yu. M. Zadiranov, M. M. Kulagina, Yu. M. Shernyakov, A. S. Shulenkov, V. A. Bykovskii, Yu. M. Solov'ev, C. Möller, N. N. Ledentsov, and V. M. Ustinov pp. 1234-1238 Full Text: PDF (147 kB) Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 µm I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, N. Yu. Gordeev, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, N. A. Maleev, A. P. Vasil'ev, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg pp. 1239-1242 Full Text: PDF (64 kB)en
dc.format.extent2012065 bytes
dc.format.extent7048 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 37en
dc.relation.ispartofseriesI. 10en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 37, I. 10en


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