Description
Semiconductors -- October 2003
Volume 37, Issue 10, pp. 1127-1242
REVIEW
Modification of Hg1 – xCdxTe Properties by Low-Energy Ions
K. D. Mynbaev and V. I. Ivanov-Omskii
pp. 1127-1150 Full Text: PDF (272 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Thermodynamic Stability of GaInSb, InAsSb, and GaInP Epitaxial Films
V. G. Deibuk
pp. 1151-1155 Full Text: PDF (66 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Kinetics of Ambipolar Diffusion and Drift Currents of Nonequilibrium Carriers in Semiconductors
A. A. Abdullaev, A. R. Aliev, and I. K. Kamilov
pp. 1156-1159 Full Text: PDF (71 kB)
A Study of Linear Dichroism Induced by Uniaxial Strain in Silicon Crystals
E. F. Venger, I. E. Matyash, and B. K. Serdega
pp. 1160-1164 Full Text: PDF (60 kB)
Photoluminescence from Amorphous Carbon Grown by Laser Ablation of Graphite
S. G. Yastrebov, V. I. Ivanov-Omskii, and A. Richter
pp. 1165-1168 Full Text: PDF (66 kB)
SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Photodeposition of Silver at the Interface of a Heterojunction Based on a Solid Electrolyte: The Case of CdSe–As2S3:Agx (x = 0.9–2.4) Heterojunctions
A. I. Stetsun
pp. 1169-1176 Full Text: PDF (116 kB)
Formation of a Native-Oxide Structure on the Surface of n-GaAs under Natural Oxidation in Air
N. A. Torkhov
pp. 1177-1184 Full Text: PDF (479 kB)
Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
K. D. Moiseev, M. P. Mikhailova, Yu. P. Yakovlev, I. Oswald, E. Hulicius, J. Pangrac, and T. Simecek
pp. 1185-1189 Full Text: PDF (74 kB)
LOW-DIMENSIONAL SYSTEMS
Resonance Raman Scattering in Ge Nanoislands Grown on a Si(111) Substrate Coated with an Ultrathin SiO2 Layer
V. A. Volodin, M. D. Efremov, A. I. Nikiforov, D. A. Orekhov, O. P. Pchelyakov, and V. V. Ul'yanov
pp. 1190-1194 Full Text: PDF (66 kB)
Electronic Absorption of Surface Acoustic Waves by Quantum Rings in a Magnetic Field
V. M. Kovalev and A. V. Chaplik
pp. 1195-1200 Full Text: PDF (84 kB)
Characteristics of Multiple-Island Single-Electron Chains in Relation to Various Factors
I. I. Abramov, S. A. Ignatenko, and E. G. Novik
pp. 1201-1204 Full Text: PDF (59 kB)
The X+ Trion in a System with Spatial Separation of the Charge Carriers
R. A. Sergeev and R. A. Suris
pp. 1205-1210 Full Text: PDF (71 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Spectral Ellipsometry of Amorphous Hydrogenated Carbon Grown by Magnetron Sputtering of Graphite
S. G. Yastrebov, M. Garriga, M. I. Alonso, and V. I. Ivanov-Omskii
pp. 1211-1213 Full Text: PDF (49 kB)
Transient Photocurrent and Photoluminescence in Porous Silicon
N. S. Averkiev, L. P. Kazakova, Yu. P. Piryatinskii, and N. N. Smirnova
pp. 1214-1216 Full Text: PDF (52 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields
V. G. Mokerov, Yu. K. Pozela, and Yu. V. Fedorov
pp. 1217-1221 Full Text: PDF (73 kB)
Silicon-on-Insulator Nanotransistors: Prospects and Problems of Fabrication
O. V. Naumova, I. V. Antonova, V. P. Popov, Yu. V. Nastaushev, T. A. Gavrilova, L. V. Litvin, and A. L. Aseev
pp. 1222-1228 Full Text: PDF (246 kB)
Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers
E. V. Kalinina, G. F. Kholuyanov, D. V. Davydov, A. M. Strel'chuk, A. Hallén, A. O. Konstantinov, V. V. Luchinin, and A. Yu. Nikiforov
pp. 1229-1233 Full Text: PDF (76 kB)
Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors
N. A. Maleev, A. P. Kovsh, A. E. Zhukov, A. P. Vasil'ev, S. S. Mikhrin, A. G. Kuz'menkov, D. A. Bedarev, Yu. M. Zadiranov, M. M. Kulagina, Yu. M. Shernyakov, A. S. Shulenkov, V. A. Bykovskii, Yu. M. Solov'ev, C. Möller, N. N. Ledentsov, and V. M. Ustinov
pp. 1234-1238 Full Text: PDF (147 kB)
Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 µm
I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, N. Yu. Gordeev, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, N. A. Maleev, A. P. Vasil'ev, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg
pp. 1239-1242 Full Text: PDF (64 kB)
