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dc.date.accessioned2007-06-12T19:16:03Z
dc.date.available2007-06-12T19:16:03Z
dc.date.issued2003-09
dc.identifier.urihttp://hdl.handle.net/1951/41455
dc.descriptionSemiconductors -- September 2003 Volume 37, Issue 9, pp. 999-1126 REVIEW Semiconductor Photoelectric Converters for the Ultraviolet Region of the Spectrum T. V. Blank and Yu. A. Gol'dberg pp. 999-1030 Full Text: PDF (327 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Diffusion of Ytterbium in Silicon D. É. Nazyrov pp. 1031-1032 Full Text: PDF (31 kB) Migration Energy of Vacancies in p-Type Silicon Crystals T. A. Pagava and Z. V. Basheleishvili pp. 1033-1036 Full Text: PDF (68 kB) Thermal Stability and Transformation of C60 Molecules Deposited on Silicon-Coated (111) Iridium N. R. Gall', E. V. Rut'kov, and A. Ya. Tontegode pp. 1037-1041 Full Text: PDF (91 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Microphotoluminescence Spectra of Cadmium Telluride Grown under Nonequilibrium Conditions V. V. Ushakov and Yu. V. Klevkov pp. 1042-1046 Full Text: PDF (190 kB) Effect of Growth Conditions on Incorporation of Si into Ga and As Sublattices of GaAs During Molecular-Beam Epitaxy I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, and S. E. Toropov pp. 1047-1052 Full Text: PDF (80 kB) Intervalley Redistribution of Electrons at Low Temperatures and the Magnetodiode Effect A. A. Abramov and I. N. Gorbatyi pp. 1053-1056 Full Text: PDF (55 kB) Electrical and Thermoelectric Properties of p-Ag2Te in the beta Phase F. F. Aliev pp. 1057-1060 Full Text: PDF (58 kB) Local Symmetry and Electronic Structure of Tin Atoms in (Pb1–xSnx)1–zInzTe Lattices S. A. Nemov, Yu. V. Kozhanova, P. P. Seregin, N. P. Seregin, and D. V. Shamshur pp. 1061-1062 Full Text: PDF (39 kB) Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev pp. 1063-1069 Full Text: PDF (122 kB) On the Nernst Coefficient of Binary Composites in a Weak Magnetic Field B. Ya. Balagurov pp. 1070-1075 Full Text: PDF (77 kB) Effect of Electron Irradiation on Optical and Photoelectric Properties of Microcrystalline Hydrogenated Silicon A. G. Kazanskii, P. A. Forsh, K. Yu. Khabarova, and M. V. Chukichev pp. 1076-1079 Full Text: PDF (55 kB) Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates L. S. Vavilova, D. A. Vinokurov, V. A. Kapitonov, A. V. Murashova, V. N. Nevedomskii, N. K. Poletaev, A. A. Sitnikova, I. S. Tarasov, and V. V. Shamakhov pp. 1080-1084 Full Text: PDF (254 kB) SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES Carrier Multiplication in Silicon P–N Junctions Yu. N. Serezhkin and A. A. Shesterkina pp. 1085-1089 Full Text: PDF (62 kB) LOW-DIMENSIONAL SYSTEMS Dependence of the Binding Energy of A(+) Centers on Quantum-Well Width in GaAs/AlGaAs Structures Yu. L. Ivanov, P. V. Petrov, A. A. Tonkikh, G. É. Tsyrlin, and V. M. Ustinov pp. 1090-1092 Full Text: PDF (48 kB) Scattering of Electrons at Impurity Ions at Low Temperatures in a Superlattice with Doped Quantum Wells S. I. Borisenko pp. 1093-1099 Full Text: PDF (85 kB) Effective Cross Section for Photoluminescence Excitation and Lifetime of Excited Er3+ Ions in Selectively Doped Multilayer Si:Er Structures S. V. Gastev, A.M. Emel'yanov, N. A. Sobolev, B. A. Andreev, Z. F. Krasil'nik, and V. B. Shmagin pp. 1100-1103 Full Text: PDF (49 kB) Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates E. S. Semenova, A. E. Zhukov, A. P. Vasil'ev, S. S. Mikhrin, A. R. Kovsh, V. M. Ustinov, Yu. G. Musikhin, S. A. Blokhin, A. G. Gladyshev, and N. N. Ledentsov pp. 1104-1106 Full Text: PDF (236 kB) PHYSICS OF SEMICONDUCTOR DEVICES Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells S. S. Mamakin, A. É. Yunovich, A. B. Wattana, and F. I. Manyakhin pp. 1107-1113 Full Text: PDF (111 kB) Phase and Structural Changes Stimulated in Multilayer Contacts to n-GaAs by Rapid Thermal Annealing N. S. Boltovets, V. N. Ivanov, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, V. V. Milenin, and I. V. Prokopenko pp. 1114-1118 Full Text: PDF (278 kB) Metamorphic Lasers for 1.3-µm Spectral Range Grown on GaAs Substrates by MBE A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, A. P. Vasil'ev, E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, Yu. G. Musikhin, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov pp. 1119-1122 Full Text: PDF (103 kB) On the Fast Recovery of the Blocking Property of Silicon Carbide Diodes I. V. Grekhov, A. S. Kyuregyan, T. T. Mnatsakanov, and S. N. Yurkov pp. 1123-1126 Full Text: PDF (60 kB)en
dc.format.extent2282068 bytes
dc.format.extent7580 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 37en
dc.relation.ispartofseriesI. 09en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 37, I. 09en


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