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dc.date.accessioned2007-06-12T19:03:50Z
dc.date.available2007-06-12T19:03:50Z
dc.date.issued2003-04
dc.identifier.urihttp://hdl.handle.net/1951/41450
dc.descriptionSemiconductors -- April 2003 Volume 37, Issue 4, pp. 367-492 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Structural Disordering and Viedemann–Franz Relation in Melts of Some II–IV–V2 Semiconductors Ya. B. Magomedov and M. A. Aidamirov pp. 367-369 Full Text: PDF (42 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters of a Semiconductor–Metal Phase Transition V. A. Klimov, I. O. Timofeeva, S. D. Khanin, E. B. Shadrin, A. V. Il'inskii, and F. Silva-Andrade pp. 370-374 Full Text: PDF (165 kB) Recombination Current Instability in Epitaxial p+–n Structures with Impurity Atoms Locally Incorporated into the n-type Region and Determination of the Deep Center Parameters B. S. Muravskii[dagger], O. N. Kulikov, and V. N. Chernyi pp. 375-379 Full Text: PDF (73 kB) Optical Reflection in (Pb0.78Sn0.22)1 – xInxTe Solid Solutions with a High Indium Content A. N. Veis and A. V. Nashchekin pp. 380-383 Full Text: PDF (226 kB) Effect of Lattice Deformation on Semiconducting Properties of CrSi2 A. V. Krivosheeva, V. L. Shaposhnikov, A. E. Krivosheev, A. B. Filonov, and V. E. Borisenko pp. 384-389 Full Text: PDF (109 kB) Electrical Properties of InAs Irradiated with Protons V. N. Brudnyi, N. G. Kolin, and A. I. Potapov pp. 390-395 Full Text: PDF (107 kB) Influence of Pulsed Laser Radiation on the Morphology and Photoelectric Properties of InSb Crystals V. A. Gnatyuk and O. S. Gorodnychenko pp. 396-398 Full Text: PDF (87 kB) IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon E. V. Astrova, T. S. Perova, V. A. Tolmachev, A. D. Remenyuk, J. Vij, and A. Moore pp. 399-403 Full Text: PDF (128 kB) Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon V. V. Lukjanitsa pp. 404-413 Full Text: PDF (126 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Photosensitive Structures Based on ZnIn2Se4 Single Crystals A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 414-416 Full Text: PDF (48 kB) Special Features of Electron Scattering at AlxGa1 – xAs/AlAs(001) Interfaces S. N. Grinyaev, G. F. Karavaev, and V. N. Chernyshov pp. 417-425 Full Text: PDF (117 kB) The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova pp. 426-432 Full Text: PDF (92 kB) The Effect of Internal Fields on Tunneling Current in Strained GaN/AlxGa1 – xN(0001) Structures S. N. Grinyaev and A. N. Razzhuvalov pp. 433-438 Full Text: PDF (81 kB) Characteristics of Gallium Arsenide Structures and Gunn Devices Based on Them Fabricated Using the Radiation–Thermal Technology M. V. Ardyshev and V. M. Ardyshev pp. 439-442 Full Text: PDF (54 kB) The Influence of Carbon on the Properties of Si/SiGe Heterostructures M. Ya. Valakh, V. N. Dzhagan, L. A. Matveeva, A. S. Oberemok, B. N. Romanyuk, and V. A. Yukhimchuk pp. 443-447 Full Text: PDF (69 kB) Effect of Irradiation with Low-Energy Ar Ions on the Characteristics of the Working and Rear Sides of Single-Crystal GaAs Substrate A. S. Alalykin, P. N. Krylov, I. V. Fedotova, and A. B. Fedotov pp. 448-451 Full Text: PDF (56 kB) Generation–Recombination Centers in CdTe:V L. A. Kosyachenko, S. Yu. Paranchich, Yu. V. Tanasyuk, V. M. Sklyarchuk, E. F. Sklyarchuk, E. L. Maslyanchuk, and V. V. Motushchuk pp. 452-455 Full Text: PDF (72 kB) Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes V. L. Litvinov, K. D. Demakov, O. A. Ageev, A. M. Svetlichny, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, and V. V. Milenin pp. 456-461 Full Text: PDF (235 kB) LOW-DIMENSIONAL SYSTEMS Properties of Ge Nanocrystals Formed by Implantation of Ge+ Ions into SiO2 Films with Subsequent Annealing under Hydrostatic Pressure I. E. Tyschenko, A. B. Talochkin, A. G. Cherkov, K. S. Zhuravlev, A. Misiuk, M. Voelskow, and W. Skorupa pp. 462-467 Full Text: PDF (93 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Laser Ultrasonic Study of Porous Silicon Layers S. M. Zharkii, A. A. Karabutov, I. M. Pelivanov, N. B. Podymova, and V. Yu. Timoshenko pp. 468-472 Full Text: PDF (72 kB) Raman Spectroscopy of Amorphous Carbon Modified with Iron S. G. Yastrebov, V. I. Ivanov-Omskii, F. Dumitrache, and C. Morosanu pp. 473-476 Full Text: PDF (52 kB) Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli pp. 477-481 Full Text: PDF (60 kB) PHYSICS OF SEMICONDUCTOR DEVICES 3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates A. A. Lebedev, A. M. Strel'chuk, D. V. Davydov, N. S. Savkina, A. S. Tregubova, A. N. Kuznetsov, V. A. Solov'ev, and N. K. Poletaev pp. 482-484 Full Text: PDF (53 kB) Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-µm Range A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov, N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev, D. A. Yarekha, and Yu. P. Yakovlev pp. 485-490 Full Text: PDF (80 kB) PERSONALIA Vladimir Ivanovich Ivanov-Omskii (dedicated to his 70th birthday) pp. 491-492 Full Text: PDF (73 kB)en
dc.format.extent2120341 bytes
dc.format.extent8785 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 37en
dc.relation.ispartofseriesI. 04en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 37, I. 04en


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