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dc.date.accessioned2007-06-12T19:00:09Z
dc.date.available2007-06-12T19:00:09Z
dc.date.issued2003-02
dc.identifier.urihttp://hdl.handle.net/1951/41448
dc.descriptionSemiconductors -- February 2003 Volume 37, Issue 2, pp. 119-238 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Special Features of Structural Defects in Undoped CdTe Textured Ingots Produced by Free Growth from a Gasdynamic Vapor Flow Yu. V. Klevkov, V. P. Martovitskii, and S. A. Medvedev pp. 119-123 Full Text: PDF (163 kB) Self-Organization of Laser-Induced Point Defects at the Initial Stages of Inelastic Photodeformation in Germanium S. V. Vintsents, A. V. Zaitseva, and G. S. Plotnikov pp. 124-130 Full Text: PDF (259 kB) Photoinduced Annealing of Metastable Defects in Boron-Doped a-Si:H Films I. A. Kurova, N. N. Ormont, and A. L. Gromadin pp. 131-133 Full Text: PDF (45 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Anomalies in Static and Dynamic Conductivity of Indium Monoselenide G. V. Lashkarev, A. I. Dmitriev, A. A. Baida, Z. D. Kovalyuk, M. V. Kondrin, and A. A. Pronin pp. 134-139 Full Text: PDF (86 kB) The U Peak in the DLTS Spectra of n-GaAs Irradiated with Fast Neutrons and 65-MeV Protons V. N. Brudnyi and V. V. Peshev pp. 140-144 Full Text: PDF (75 kB) Inversion of Conductivity Type in ZnSe Single Crystals Obtained by the Method of Free Growth Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin pp. 145-147 Full Text: PDF (43 kB) Specific Features of Determination of the Concentrations of Shallow-Level Impurities in Semiconductors from Analysis of Edge-Luminescence Spectra K. D. Glinchuk and A. V. Prokhorovich pp. 148-155 Full Text: PDF (105 kB) Classification of Frequencies of the Shubnikov–de Haas Oscillations in Layered Charge-Ordered Crystals under Magnetic Breakdown P. V. Gorskyi pp. 156-159 Full Text: PDF (44 kB) On the Experimental Data Processing of Magnetoresistance Oscillations in Two-Dimensional Electron Gas N. S. Averkiev, A. M. Monakhov, N. I. Sablina, and P. M. Koenraad pp. 160-164 Full Text: PDF (77 kB) Electrical Properties of FeIn2Se4 Single Crystals N. N. Niftiev, M. A. Alidzhanov, O. B. Tagiev, and M. B. Muradov pp. 165-167 Full Text: PDF (60 kB) An Impurity Band in Hg3In2Te6 Crystals Doped with Silicon P. N. Gorlei and O. G. Grushka pp. 168-171 Full Text: PDF (80 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Electrical Properties of the p+-Bi2Te3–p-GaSe Isotype Heterostructure S. I. Drapak, V. A. Manasson, V. V. Netyaga, and Z. D. Kovalyuk pp. 172-177 Full Text: PDF (104 kB) Fabrication and Properties of Photosensitive Structures Based on ZnIn2S4 Single Crystals A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and N. Fernelius pp. 178-182 Full Text: PDF (84 kB) Charge Transport in Fe–p-InP Diode Structures S. V. Slobodchikov, Kh. M. Salikhov, and B. E. Samorukov pp. 183-186 Full Text: PDF (57 kB) Barrier Formation in a Heterostructure Formed of Native Oxide and p-InSe. Electrical and Photoelectrical Properties S. I. Drapak, V. B. Orletskii, Z. D. Kovalyuk, and V. V. Netyaga pp. 187-193 Full Text: PDF (97 kB) LOW-DIMENSIONAL SYSTEMS Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy Yu. N. Drozdov, N. V. Baidus', B. N. Zvonkov, M. N. Drozdov, O. I. Khrykin, and V. I. Shashkin pp. 194-199 Full Text: PDF (79 kB) Rashba Effect in Inversion and Accumulation InAs layers V. F. Radantsev, I. M. Ivankiv, and A. M. Yafyasov pp. 200-206 Full Text: PDF (85 kB) Photoluminescence from Germanium Quantum Wells and Quantum Dots in Silicon Grown by MBE at Low Temperature T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. M. Rzaev, and N. N. Sibel'din pp. 207-209 Full Text: PDF (49 kB) Optical Properties of Structures with Ultradense Arrays of Ge QDs in an Si Matrix A. G. Makarov, N. N. Ledentsov, A. F. Tsatsul'nikov, G. E. Cirlin, V. A. Egorov, V. M. Ustinov, N. D. Zakharov, and P. Werner pp. 210-214 Full Text: PDF (197 kB) Population Inversion between Gamma Subbands in Quantum Wells under the Conditions of Gamma–L Intervalley Transfer V. Ya. Aleshkin, A. A. Andronov, and A. A. Dubinov pp. 215-219 Full Text: PDF (76 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Synthesis of New Carbon–Nitrogen Nanoclusters by Annealing Diamond-Like Carbon Films in Nitrogen I. A. Faizrakhmanov, V. V. Bazarov, N. V. Kurbatova, I. B. Khaibullin, and A. L. Stepanov pp. 220-223 Full Text: PDF (61 kB) Effect of Thermal Annealing on Optical and Photoelectric Properties of Microcrystalline Hydrogenated Silicon Films A. G. Kazanskii, H. Mell, and P. A. Forsh pp. 224-226 Full Text: PDF (56 kB) PHYSICS OF SEMICONDUCTOR DEVICES Electrical Properties of Surface-Barrier Diodes Based on CdZnTe L. A. Kosyachenko, I. M. Rarenko, Z. I. Zakharchuk, V. M. Sklyarchuk, E. F. Sklyarchuk, I. V. Solonchuk, I. S. Kabanova, and E. L. Maslyanchuk pp. 227-232 Full Text: PDF (80 kB) Internal Quantum Efficiency of Stimulated Emission of (lambda = 1.55 µm) InGaAsP/InP Laser Diodes G. V. Skrynnikov, G. G. Zegrya, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov, and I. S. Tarasov pp. 233-238 Full Text: PDF (70 kB)en
dc.format.extent1902697 bytes
dc.format.extent8197 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 37en
dc.relation.ispartofseriesI. 02en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 37, I. 02en


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