Description
Semiconductors -- September 2002
Volume 36, Issue 9, pp. 953-1071
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy
M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent'eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, and V. V. Chaldyshev
pp. 953-957 Full Text: PDF (67 kB)
Mechanism of Copper Diffusion over the Si(110) Surface
A. E. Dolbak, R. A. Zhachuk, and B. Z. Olshanetsky
pp. 958-961 Full Text: PDF (60 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Internal Friction and Effective Shear Modulus of Single-Crystal Silicon in Early Stages of Oxygen Precipitation
V. V. Motskin, A. V. Oleinich-Lysyuck, N. D. Raranskii, and I. M. Fodchuk
pp. 962-965 Full Text: PDF (93 kB)
The Temperature and Concentration Dependences of the Charge Carrier Mobility in PbTe–MnTe Solid Solutions
E. I. Rogacheva and I. M. Krivul'kin
pp. 966-970 Full Text: PDF (85 kB)
Electron–Plasmon Interaction in Acceptor-Doped Bismuth Crystals
N. P. Stepanov and V. M. Grabov
pp. 971-974 Full Text: PDF (63 kB)
Study of Zinc Impurity Atoms in GaP, GaAs, and GaSb 67Ga(67Zn) and 67Cu(67Zn) by Emission Mössbauer Spectroscopy
N. P. Seregin, S. A. Nemov, and S. M. Irkaev
pp. 975-976 Full Text: PDF (67 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Cathodoluminescence of ZnO/GaN/alpha-Al2O3 Heteroepitaxial Structures Grown by Chemical Vapor Deposition
M. V. Chukichev, B. M. Ataev, V. V. Mamedov, Ya. I. Alivov, and I. I. Khodos
pp. 977-980 Full Text: PDF (73 kB)
Experimental Observation of Splitting of the Light and Heavy Hole Bands in Elastically Strained GaAsN
A. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, and C. Tu
pp. 981-984 Full Text: PDF (54 kB)
Variations in the Properties of an Implantation-Synthesized SixNy–Si Heterosystem as a Result of Thermal and Ion-Beam Treatments
V. V. Karzanov, K. A. Markov, V. V. Sdobnyakov, and E. S. Demidov
pp. 985-989 Full Text: PDF (154 kB)
Optical Storage on the Basis of an n-InSb–SiO2–p-Si Heterostructure
Yu. A. Nikol'skii
pp. 990-992 Full Text: PDF (47 kB)
Field-Dependent Photosensitivity of In–SiO2–Cd0.28Hg0.72Te Metal–Insulator–Semiconductor Structures with an Opaque Field Electrode
V. V. Vasil'ev, A. F. Kravchenko, and Yu. P. Mashukov
pp. 993-996 Full Text: PDF (54 kB)
Effect of Carrier Localization on the Optical Properties of MBE-Grown GaAsN/GaAs Heterostructures
B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh, A. F. Tsatsul'nikov, J. Y. Chi, J. S. Wang, L. Wei, and V. M. Ustinov
pp. 997-1000 Full Text: PDF (69 kB)
Charge Carrier Transport through the Contact of Metal with a Superconducting Semiconductor
G. V. Kuznetsov
pp. 1001-1007 Full Text: PDF (90 kB)
Adsorption and Transformation of C60 Molecules at the (100) Si Surface
N. R. Gall, E. V. Rut'kov, and A. Ya. Tontegode
pp. 1008-1012 Full Text: PDF (101 kB)
LOW-DIMENSIONAL SYSTEMS
Stark Effect in Vertically Coupled Quantum Dots in InAs–GaAs Heterostructures
M. M. Sobolev, V. M. Ustinov, A. E. Zhukov, Yu. G. Musikhin, and N. N. Ledentsov
pp. 1013-1019 Full Text: PDF (130 kB)
The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
D. S. Sizov, M. V. Maksimov, A. F. Tsatsul'nikov, N. A. Cherkashin, N. V. Kryzhanovskaya, A. B. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil'ev, R. Selin, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, and Zh. I. Alferov
pp. 1020-1026 Full Text: PDF (96 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Photoluminescent and Electronic Properties of Nanocrystalline Silicon Doped with Gold
É. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, É. G. Manoilov, V. E. Primachenko, S. V. Svechnikov, and E. F. Venger
pp. 1027-1032 Full Text: PDF (81 kB)
Strains and Crystal Lattice Defects Arising in Macroporous Silicon under Oxidation
E. V. Astrova, V. V. Ratnikov, A. D. Remenyuk, and I. L. Shul'pina
pp. 1033-1042 Full Text: PDF (277 kB)
Hysteresis of the Photonic Band Gap in VO2 Photonic Crystal in the Semiconductor–Metal Phase Transition
V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel'kin, E. B. Shadrin, A. V. Il'inskii, and R. Boeyink
pp. 1043-1047 Full Text: PDF (96 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Photoelectric Phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al Solar Cells
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, W. Fuhs, and A. Froitzheim
pp. 1048-1052 Full Text: PDF (85 kB)
Analysis of High-Frequency Response and Nonlinear Coherent Generation of Resonance–Tunneling Diodes within a Broad Frequency Range with Account of Electron–Electron Interaction
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 1053-1057 Full Text: PDF (61 kB)
Study of the Potential Distribution in a Forward-Biased Silicon Diode Using Electrostatic Force Microscopy
A. V. Ankudinov, A. N. Titkov, R. Laiho, and V. A. Kozlov
pp. 1058-1064 Full Text: PDF (191 kB)
MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
P. V. Bulaev, V. A. Kapitonov, A. V. Lutetskii, A. A. Marmalyuk, D. B. Nikitin, D. N. Nikolaev, A. A. Padalitsa, N. A. Pikhtin, A. D. Bondarev, I. D. Zalevskii, and I. S. Tarasov
pp. 1065-1069 Full Text: PDF (97 kB)
PERSONALIA
Éduard Mushegovich Kazaryan (on his 60th birthday)
pp. 1070-1071 Full Text: PDF (104 kB)
