Semiconductors -- July 2002 Volume 36, Issue 7, pp. 717-836 REVIEWS Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes V. I. Sankin pp. 717-739 Full Text: PDF (428 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of Long-Term Annealing on Accumulation of Impurities Yu. A. Bykovskii[dagger], G. M. Voronkova, V. V. Grigor'ev, V. V. Zuev, A. V. Zuev, A. D. Kiryukhin, V. I. Chmyrev, and S. A. Shcherbakov pp. 740-742 Full Text: PDF (41 kB) Analysis of the Size-Distribution Function of Metallic Nanoclusters in a Hydrogenated Amorphous Carbon Host V. I. Ivanov-Omskii, A. B. Lodygin, and S. G. Yastrebov pp. 743-746 Full Text: PDF (156 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Modification of the Electrical and Photoelectric Properties of Mg0.15Cd0.85Te Solid Solutions as a Result of Pulsed Laser Irradiation within the Transparency Range A. Baidullaeva, E. F. Venger, A. I. Vlasenko, A. V. Lomovtsev, and P. E. Mozol' pp. 747-750 Full Text: PDF (54 kB) Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure and Lattice Relaxation Effects N. I. Medvedeva, É. I. Yuryeva, and A. L. Ivanovskii pp. 751-754 Full Text: PDF (99 kB) Parameters of Excitons in Monoclinic Zinc Diarsenide A. I. Kozlov, S. G. Kozlova, A. V. Matveev, and V. V. Sobolev pp. 755-757 Full Text: PDF (49 kB) Structure and Properties of Silicon Carbide Grown on Porous Substrate by Vacuum Sublimation Epitaxy N. S. Savkina, V. V. Ratnikov, A. Yu. Rogachev, V. B. Shuman, A. S. Tregubova, and A. A. Volkova pp. 758-762 Full Text: PDF (158 kB) The Effect of Composition on the Properties and Defect Structure of the CdS–Ga2S3 Solid Solution E. F. Venger, I. B. Ermolovich, V. V. Milenin, and V. P. Papusha pp. 763-771 Full Text: PDF (127 kB) Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek pp. 772-781 Full Text: PDF (115 kB) Thermally Stimulated Currents in MnIn2S4 Single Crystals N. N. Niftiev pp. 782-783 Full Text: PDF (50 kB) E0 Photoreflectance Spectra of Semiconductor Structures with a High Density of Interface States R. V. Kuz'menko and É. P. Domashevskaya pp. 784-788 Full Text: PDF (59 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Switching Effect in Si–CdS Heterojunctions Synthesized in Highly Nonequilibrium Conditions A. P. Belyaev and V. P. Rubets pp. 789-792 Full Text: PDF (80 kB) Special Features of the Magnetodiode Effect in Multivalley Semiconductors at Low Temperatures A. A. Abramov and I. N. Gorbatyi pp. 793-799 Full Text: PDF (97 kB) Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova pp. 800-804 Full Text: PDF (70 kB) Study of the Effect of Electron Irradiation on a GaSe–SiO2 Structure by Spectroscopic Methods T. D. Ibragimov, E. A. Dzhafarova, and Z. B. Safarov pp. 805-807 Full Text: PDF (45 kB) LOW-DIMENSIONAL SYSTEMS Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons in a GaAs/Al0.36Ga0.64As Superlattice at Temperatures in the Region of 77 K S. I. Borisenko pp. 808-815 Full Text: PDF (103 kB) GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics V. A. Solov'ev, A. A. Toropov, B. Ya. Meltser, Ya. A. Terent'ev, R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, S. V. Ivanov, Motlan, E. M. Goldys, and P. S. Kop'ev pp. 816-820 Full Text: PDF (178 kB) Inhomogeneous Broadening of the Ground Electron Level in a Quantum Dot Array V. I. Belyavskii and S. V. Shevtsov pp. 821-827 Full Text: PDF (85 kB) PHYSICS OF SEMICONDUCTOR DEVICES Optically Pumped "Immersion-Lens" Infrared Light Emitting Diodes Based on Narrow-Gap III–V Semiconductors M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 828-831 Full Text: PDF (58 kB) Amorphization of the Surface Region in Epitaxial n-GaAs Treated with Atomic Hydrogen N. A. Torkhov, I. V. Ivonin, and E. V. Chernikov pp. 832-836 Full Text: PDF (253 kB)