Description
Semiconductors -- April 2002
Volume 36, Issue 4, pp. 363-479
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Changes in the State of Phosphorus Atoms in the Silicon Lattice as a Result of Interaction with Radiation Defects
V. V. Bolotov, G. N. Kamaev, and L. S. Smirnov
pp. 363-366 Full Text: PDF (52 kB)
Ultrasonically Stimulated Low-Temperature Redistribution of Impurities in Silicon
I. V. Ostrovskii, A. B. Nadtochii, and A. A. Podolyan
pp. 367-369 Full Text: PDF (49 kB)
Simulation of Low-Temperature Arsenic Diffusion from a Heavily Doped Silicon Layer
O. V. Aleksandrov
pp. 370-374 Full Text: PDF (64 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Generalized Character of the Dielectric Response of CdTe Crystals Grown from the Melt
I. A. Klimenko and V. P. Migal'
pp. 375-378 Full Text: PDF (51 kB)
Effect of the Radial Electric Field on Absorption in a Quantized Spherical Layer
V. A. Arutyunyan
pp. 379-381 Full Text: PDF (46 kB)
Photoelectric C–V Profiling of Majority Charge Carriers and Effective Lifetimes of Minority Charge Carriers in Gettered GaAs Wafers
V. F. Andrievskii, A. T. Gorelenok, N. A. Zagorel'skaya, A. V. Kamanin, and N. M. Shmidt
pp. 382-384 Full Text: PDF (51 kB)
Effective Electron Mass in Heavily Doped GaAs in the Ordering of Impurity Complexes
V. A. Bogdanova, N. A. Davletkil'deev, N. A. Semikolenova, and E. N. Sidorov
pp. 385-389 Full Text: PDF (74 kB)
Determination of the Matrix Element of the Quasi-Momentum Operator in the Zero-Gap Semiconductor HgSe by the Field-Effect Method in Electrolyte
O. Yu. Shevchenko, V. F. Radantsev, A. M. Yafyasov, V. B. Bozhevolnov, I. M. Ivankiv, and A. D. Perepelkin
pp. 390-393 Full Text: PDF (50 kB)
Energy Transfer of Ce3+ --> Eu2+ in the CaGa2S4 Compound
R. B. Dzhabbarov
pp. 394-397 Full Text: PDF (49 kB)
Features of Optical Properties of AlxGa1 – xN Solid Solutions
V. G. Deibuk, A. V. Voznyi, and M. M. Sletov
pp. 398-403 Full Text: PDF (74 kB)
Increase in Quantum Efficiency of IR Emission in Elastically Strained Narrow-Gap Semiconductors
S. G. Gasan-zade, M. V. Strikha, S. V. Staryi, G. A. Shepel'skii, and V. A. Boiko
pp. 404-409 Full Text: PDF (88 kB)
Analysis and Refinement of Mathematical Tools for Modified Time-of-Flight Method
S. P. Vikhrov, N. V. Vishnyakov, A. A. Maslov, and V. G. Mishustin
pp. 410-413 Full Text: PDF (52 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Causes of Variation in the Static Current–Voltage Characteristics of the Structures with the Me/n–n+-GaAs Schottky Barrier on Hydrogenation
N. A. Torkhov
pp. 414-419 Full Text: PDF (81 kB)
Field Effect in a System Consisting of Electrolyte and (TlBiSe2)1 – x–(TlBiS2)x Solid Solution
O. Yu. Shevchenko, A. M. Yafyasov, V. B. Bozhevol'nov, I. M. Ivankiv, and A. D. Perepelkin
pp. 420-423 Full Text: PDF (68 kB)
Effect of Surface on the Excitonic Characteristics of Semiconductors
V. G. Litovchenko, N. L. Dmitruk, D. V. Korbutyak, and A. V. Sarikov
pp. 424-429 Full Text: PDF (81 kB)
Nature of the Edge Electroluminescence Peak in the Si:(Er,O) Diode Breakdown Mode
A. M. Emel'yanov, Yu. A. Nikolaev, and N. A. Sobolev
pp. 430-433 Full Text: PDF (66 kB)
LOW-DIMENSIONAL SYSTEMS
Control of the Interband and Intersubband Transition Energy in Quantum Wells Using Localized Isoelectronic Perturbations
K. Durinyan, A. Zatikyan, and S. Petrosyan
pp. 434-438 Full Text: PDF (72 kB)
Quantized Conductance in Silicon Quantum Wires
N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, W. Gehlhoff, V. K. Ivanov, and I. A. Shelykh
pp. 439-460 Full Text: PDF (389 kB)
Exciton Recombination in delta-Doped Type-II GaAs/AlAs Superlattices
K. S. Zhuravlev, A. K. Sulaimanov, A. M. Gilinskii, L. S. Braginskii, A. I. Toropov, and A. K. Bakarov
pp. 461-465 Full Text: PDF (76 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Effect of Adsorption on the Electrical Properties of Structures Based on Oxidized Porous Silicon
D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, I. B. Mysenko, and E. I. Khasina
pp. 466-471 Full Text: PDF (75 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Special Features of Electron Drift in Submicrometer GaAs Structures
V. A. Gergel', E. Yu. Kul'kova, V. G. Mokerov, M. V. Timofeev, and G. Yu. Khrenov
pp. 472-475 Full Text: PDF (51 kB)
Long-Term Variation of Electrical and Photoelectric Characteristics of Pd–p-InP Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
pp. 476-479 Full Text: PDF (63 kB)
