Semiconductors -- April 2002 Volume 36, Issue 4, pp. 363-479 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Changes in the State of Phosphorus Atoms in the Silicon Lattice as a Result of Interaction with Radiation Defects V. V. Bolotov, G. N. Kamaev, and L. S. Smirnov pp. 363-366 Full Text: PDF (52 kB) Ultrasonically Stimulated Low-Temperature Redistribution of Impurities in Silicon I. V. Ostrovskii, A. B. Nadtochii, and A. A. Podolyan pp. 367-369 Full Text: PDF (49 kB) Simulation of Low-Temperature Arsenic Diffusion from a Heavily Doped Silicon Layer O. V. Aleksandrov pp. 370-374 Full Text: PDF (64 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Generalized Character of the Dielectric Response of CdTe Crystals Grown from the Melt I. A. Klimenko and V. P. Migal' pp. 375-378 Full Text: PDF (51 kB) Effect of the Radial Electric Field on Absorption in a Quantized Spherical Layer V. A. Arutyunyan pp. 379-381 Full Text: PDF (46 kB) Photoelectric C–V Profiling of Majority Charge Carriers and Effective Lifetimes of Minority Charge Carriers in Gettered GaAs Wafers V. F. Andrievskii, A. T. Gorelenok, N. A. Zagorel'skaya, A. V. Kamanin, and N. M. Shmidt pp. 382-384 Full Text: PDF (51 kB) Effective Electron Mass in Heavily Doped GaAs in the Ordering of Impurity Complexes V. A. Bogdanova, N. A. Davletkil'deev, N. A. Semikolenova, and E. N. Sidorov pp. 385-389 Full Text: PDF (74 kB) Determination of the Matrix Element of the Quasi-Momentum Operator in the Zero-Gap Semiconductor HgSe by the Field-Effect Method in Electrolyte O. Yu. Shevchenko, V. F. Radantsev, A. M. Yafyasov, V. B. Bozhevolnov, I. M. Ivankiv, and A. D. Perepelkin pp. 390-393 Full Text: PDF (50 kB) Energy Transfer of Ce3+ --> Eu2+ in the CaGa2S4 Compound R. B. Dzhabbarov pp. 394-397 Full Text: PDF (49 kB) Features of Optical Properties of AlxGa1 – xN Solid Solutions V. G. Deibuk, A. V. Voznyi, and M. M. Sletov pp. 398-403 Full Text: PDF (74 kB) Increase in Quantum Efficiency of IR Emission in Elastically Strained Narrow-Gap Semiconductors S. G. Gasan-zade, M. V. Strikha, S. V. Staryi, G. A. Shepel'skii, and V. A. Boiko pp. 404-409 Full Text: PDF (88 kB) Analysis and Refinement of Mathematical Tools for Modified Time-of-Flight Method S. P. Vikhrov, N. V. Vishnyakov, A. A. Maslov, and V. G. Mishustin pp. 410-413 Full Text: PDF (52 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Causes of Variation in the Static Current–Voltage Characteristics of the Structures with the Me/n–n+-GaAs Schottky Barrier on Hydrogenation N. A. Torkhov pp. 414-419 Full Text: PDF (81 kB) Field Effect in a System Consisting of Electrolyte and (TlBiSe2)1 – x–(TlBiS2)x Solid Solution O. Yu. Shevchenko, A. M. Yafyasov, V. B. Bozhevol'nov, I. M. Ivankiv, and A. D. Perepelkin pp. 420-423 Full Text: PDF (68 kB) Effect of Surface on the Excitonic Characteristics of Semiconductors V. G. Litovchenko, N. L. Dmitruk, D. V. Korbutyak, and A. V. Sarikov pp. 424-429 Full Text: PDF (81 kB) Nature of the Edge Electroluminescence Peak in the Si:(Er,O) Diode Breakdown Mode A. M. Emel'yanov, Yu. A. Nikolaev, and N. A. Sobolev pp. 430-433 Full Text: PDF (66 kB) LOW-DIMENSIONAL SYSTEMS Control of the Interband and Intersubband Transition Energy in Quantum Wells Using Localized Isoelectronic Perturbations K. Durinyan, A. Zatikyan, and S. Petrosyan pp. 434-438 Full Text: PDF (72 kB) Quantized Conductance in Silicon Quantum Wires N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, W. Gehlhoff, V. K. Ivanov, and I. A. Shelykh pp. 439-460 Full Text: PDF (389 kB) Exciton Recombination in delta-Doped Type-II GaAs/AlAs Superlattices K. S. Zhuravlev, A. K. Sulaimanov, A. M. Gilinskii, L. S. Braginskii, A. I. Toropov, and A. K. Bakarov pp. 461-465 Full Text: PDF (76 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS The Effect of Adsorption on the Electrical Properties of Structures Based on Oxidized Porous Silicon D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, I. B. Mysenko, and E. I. Khasina pp. 466-471 Full Text: PDF (75 kB) PHYSICS OF SEMICONDUCTOR DEVICES Special Features of Electron Drift in Submicrometer GaAs Structures V. A. Gergel', E. Yu. Kul'kova, V. G. Mokerov, M. V. Timofeev, and G. Yu. Khrenov pp. 472-475 Full Text: PDF (51 kB) Long-Term Variation of Electrical and Photoelectric Characteristics of Pd–p-InP Diode Structures S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu pp. 476-479 Full Text: PDF (63 kB)