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dc.descriptionSemiconductors -- January 2002 Volume 36, Issue 1, pp. 1-120 REVIEW Hopping Conduction via Strongly Localized Impurity States of Indium in PbTe and Its Solid Solutions Yu. I. Ravich and S. A. Nemov pp. 1-20 Full Text: PDF (242 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Influence of the Screening Effect on Passivation of p-Type Silicon by Hydrogen O. V. Aleksandrov pp. 21-25 Full Text: PDF (74 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Special Features of Hopping Conduction in p-Hg0.78Cd0.22Te Crystals under Conditions of Dual Doping V. V. Bogoboyashchii pp. 26-33 Full Text: PDF (109 kB) On Stabilization of the Fermi Level in Ga-Doped PbTe-Based Alloys E. P. Skipetrov, E. A. Zvereva, L. A. Skipetrova, O. S. Volkova, and E. I. Slyn'ko pp. 34-37 Full Text: PDF (84 kB) Effect of Boron Dopant on the Photoconductivity of Microcrystalline Hydrogenated Silicon Films A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh pp. 38-40 Full Text: PDF (58 kB) Evaluation of Physical Parameters for the Group III Nitrates: BN, AlN, GaN, and InN S. Yu. Davydov pp. 41-44 Full Text: PDF (43 kB) Optical Absorption by Transitions between Subbands of Light and Heavy Holes in p-MnxHg1 – xTe I. M. Nesmelova, N. S. Baryshev[dagger], and V. A. Andreev pp. 45-47 Full Text: PDF (51 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES A Combined Technique for Studying the Multicomponent Spectra of Photoreflection from Semiconductors R. V. Kuz'menko, A. V. Ganzha, and É. P. Domashevskaya pp. 48-53 Full Text: PDF (72 kB) Sulfide Passivating Coatings on GaAs(100) Surface under Conditions of MBE Growth of /GaAs I. V. Sedova, T. V. L'vova, V. P. Ulin, S. V. Sorokin, A. V. Ankudinov, V. L. Berkovits, S. V. Ivanov, and P. S. Kop'ev pp. 54-59 Full Text: PDF (319 kB) Transformation of Interface States in Silicon-on-Insulator Structures under Annealing in Hydrogen Atmosphere I. V. Antonova, I. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, and V. A. Skuratov pp. 60-64 Full Text: PDF (75 kB) LOW-DIMENSIONAL SYSTEMS Spontaneous Spin Polarization of Electrons in Quantum Wires I. A. Shelykh, N. T. Bagraev, V. K. Ivanov, and L. E. Klyachkin pp. 65-73 Full Text: PDF (106 kB) Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots V. P. Evtikhiev, O. V. Konstantinov, A. V. Matveentsev, and A. E. Romanov pp. 74-80 Full Text: PDF (79 kB) Changes in the Density of Nonradiative Recombination Centers in GaAs/AlGaAs Quantum-Well Structures as a Result of Treatment in CF4 Plasma T. S. Shamirzaev, A. L. Sokolov, K. S. Zhuravlev, A. Yu. Kobitski, H. P. Wagner, and D. R. T. Zahn pp. 81-84 Full Text: PDF (55 kB) Charge Effects Controlling the Current Hysteresis and Negative Differential Resistance in Periodic Nanodimensional Structures Si/CaF2 Yu. A. Berashevich, A. L. Danilyuk, A. N. Kholod, and V. E. Borisenko pp. 85-90 Full Text: PDF (73 kB) Spin Relaxation in Asymmetrical Heterostructures N. S. Averkiev, L. E. Golub, and M. Willander pp. 91-97 Full Text: PDF (97 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS A Mechanism of Oxygen-Induced Passivation of Porous Silicon in the HF : HCl : C2H5OH Solutions S. A. Gavrilov, A. I. Belogorokhov, and L. I. Belogorokhova pp. 98-101 Full Text: PDF (58 kB) Formation of Silicon Nanocrystals with Preferred (100) Orientation in Amorphous Si:H Films Grown on Glass Substrates and Exposed to Nanosecond Pulses of Ultraviolet Radiation M. D. Efremov, V. V. Bolotov, V. A. Volodin, S. A. Kochubei, and A. V. Kretinin pp. 102-109 Full Text: PDF (95 kB) Density of States in Amorphous Carbon and Its Modification by Annealing V. I. Ivanov-Omskii, A. Tagliaferro, G. Fanchini, and S. G. Yastrebov pp. 110-115 Full Text: PDF (82 kB) PHYSICS OF SEMICONDUCTOR DEVICES A Graded-Gap Detector of Ionizing Radiation J. Pozela, K. Pozela, A. Silenas, V. Jasutis, L. Dapkus, A. Kinduris, and V. Juciene pp. 116-120 Full Text: PDF (71 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 36en
dc.relation.ispartofseriesI. 01en
dc.titleSemiconductors V. 36, I. 01en

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