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dc.date.accessioned2007-06-11T20:11:09Z
dc.date.available2007-06-11T20:11:09Z
dc.date.issued2001-12
dc.identifier.urihttp://hdl.handle.net/1951/41433
dc.descriptionSemiconductors -- December 2001 Volume 35, Issue 12, pp. 1347-1417 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Paramagnetic Defects in Silicon Carbide Crystals Irradiated with Gamma-Ray Quanta I. V. Ilyin, E. N. Mokhov, and P. G. Baranov pp. 1347-1354 Full Text: PDF (117 kB) Interaction of Hydrogen with Radiation Defects in p-Si Crystals O. V. Feklisova, N. A. Yarykin, E. B. Yakimov, and J. Weber pp. 1355-1360 Full Text: PDF (84 kB) Electrical Properties of the Proton-Irradiated Semi-Insulating GaAs:Cr V. N. Brudnyi and A. I. Potapov pp. 1361-1365 Full Text: PDF (80 kB) Dynamics of Nonequilibrium Gratings Induced in Silicon Films by Femtosecond Laser Pulses M. F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, and I. V. Negrashov pp. 1366-1368 Full Text: PDF (55 kB) Radiative Recombination via Direct Optical Transitions in In1 – xGaxAs (0 <= x <= 0.16) Solid Solutions M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 1369-1371 Full Text: PDF (49 kB) Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC A. A. Lebedev, D. V. Davydov, A. S. Tregubova, E. V. Bogdanova, M. P. Shcheglov, and M. V. Pavlenko pp. 1372-1374 Full Text: PDF (457 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES The Contact of Metal with Silicon Carbide: Schottky Barrier Height in Relation to SiC Polytype S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov pp. 1375-1377 Full Text: PDF (35 kB) LOW-DIMENSIONAL SYSTEMS Ostwald Ripening of Quantum-Dot Nanostructures R. D. Vengrenovich, Yu. V. Gudyma, and S. V. Yarema pp. 1378-1382 Full Text: PDF (60 kB) Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov, and S. V. Svechnikov pp. 1383-1389 Full Text: PDF (145 kB) Renormalization of Energy Spectrum of Quantum Dots under Vibrational Resonance Conditions A. V. Fedorov, A. V. Baranov, A. Itoh, and Y. Masumoto pp. 1390-1397 Full Text: PDF (111 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Scanning Tunneling Spectroscopy of a-C:H and a-C:(H, Cu) Films Prepared by Magnetron Sputtering T. K. Zvonareva, V. I. Ivanov-Omskii, V. V. Rozanov, and L. V. Sharonova pp. 1398-1403 Full Text: PDF (78 kB) PHYSICS OF SEMICONDUCTOR DEVICES InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3–4 µm Spectral Range T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev pp. 1404-1417 Full Text: PDF (183 kB)en
dc.format.extent1356833 bytes
dc.format.extent4144 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 35en
dc.relation.ispartofseriesI. 12en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 35, I. 12en


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