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dc.date.accessioned2007-06-11T20:09:55Z
dc.date.available2007-06-11T20:09:55Z
dc.date.issued2001-11
dc.identifier.urihttp://hdl.handle.net/1951/41432
dc.descriptionSemiconductors -- November 2001 Volume 35, Issue 11, pp. 1223-1346 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Physical Foundations of Metastable Impurity Center Reconstruction in Semiconductors D. E. Onopko and A. I. Ryskin pp. 1223-1230 Full Text: PDF (86 kB) A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism O. V. Aleksandrov pp. 1231-1241 Full Text: PDF (123 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS The Impurity Optical Absorption and Conduction Band Structure in 6H-SiC I. S. Gorban'[dagger] and A. P. Krokhmal' pp. 1242-1248 Full Text: PDF (100 kB) Magnetic Properties of Pb1 – xGexTe Alloys Doped with Ytterbium E. P. Skipetrov, N. A. Chernova, L. A. Skipetrova, A. V. Golubev, and E. I. Slyn'ko pp. 1249-1251 Full Text: PDF (47 kB) On the Charge Transport Mechanism in n-InSb Films Yu. A. Nikol'skii pp. 1252-1253 Full Text: PDF (41 kB) Effect of Bismuth Impurity on Carrier Density in PbSe:Bi:Se Epitaxial Layers V. A. Zykov, T. A. Gavrikova, V. I. Il'in, S. A. Nemov, and P. V. Savintsev pp. 1254-1258 Full Text: PDF (60 kB) Photoelectric Phenomena in (µcxa1 – x)-Si:H/c-Si Heterostructures H. Mell, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 1259-1262 Full Text: PDF (69 kB) A Pulsed Synthesis of beta-FeSi2 Layers on Silicon Implanted with Fe+ Ions R. I. Batalov, R. M. Bayazitov, E. I. Terukov, V. Kh. Kudoyarova, G. Weiser, and H. Kuehne pp. 1263-1269 Full Text: PDF (88 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Generation–Recombination and Diffusion Currents in HgMnTe n+–p Junctions L. A. Kosyachenko, A. V. Markov, S. É. Ostapov, and I. M. Rarenko pp. 1270-1278 Full Text: PDF (119 kB) Effect of Surface Orientation of CdxHg1 – xTe Crystals on the Properties of Surface Anodic Oxides V. G. Sredin, Yu. S. Mezin, and V. M. Ukrozhenko pp. 1279-1281 Full Text: PDF (50 kB) Photosensitivity of a - C:H/c -Si Heterojunctions V. G. Baryshnikov, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 1282-1284 Full Text: PDF (55 kB) Reverse Current in Graded-Gap p–n Structure with Nonmonotonic Coordinate Dependence of the Band Gap B. S. Sokolovskii pp. 1285-1290 Full Text: PDF (85 kB) Role of Sulfide Ion Solvation in the Modification of GaAs Surface Electronic Structure M. V. Lebedev pp. 1291-1299 Full Text: PDF (103 kB) LOW-DIMENSIONAL SYSTEMS Analogue of Gunn Effect in Tunneling between Quantum Wells with Different Mobilities P. I. Biryulin, A. A. Gorbatsevich, V. V. Kapaev, Yu. V. Kopaev, and V. T. Trofimov pp. 1300-1304 Full Text: PDF (70 kB) Electron Nonelastic Scattering by Confined and Interface Polar Optical Phonons in a Modulation-Doped AlGaAs/GaAs/AlGaAs Quantum Well K. Pozela pp. 1305-1308 Full Text: PDF (54 kB) Electrical Characteristics of Single-Gate Interference Transistors Based on Various Semiconductor Materials I. I. Abramov and A. I. Rahachou pp. 1309-1313 Full Text: PDF (66 kB) Medium-Range Order and Optoelectronic Properties of a Tetrahedrally Coordinated Hydrogenated Amorphous Semiconductor O. A. Golikova pp. 1314-1319 Full Text: PDF (72 kB) Structural and Photonic Properties of Opal–GaN Nanocomposites V. G. Golubev, D. A. Kurdyukov, A. V. Medvedev, A. B. Pevtsov, L. M. Sorokin, and J. L. Hutchison pp. 1320-1323 Full Text: PDF (291 kB) PHYSICS OF SEMICONDUCTOR DEVICES MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, A. L. Stankevich, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, I. N. Arsent'ev, and I. S. Tarasov pp. 1324-1328 Full Text: PDF (235 kB) Photoluminescence Properties of Polycrystalline ZnO/CdS/CuInGaSe2 Solar Cells at a Low Temperature G. A. Medvedkin, E. I. Terukov, K. Sato, Yu. Hasegava, and K. Hirose pp. 1329-1334 Full Text: PDF (75 kB) Simulation of Current–Voltage Characteristics of a Ferroelectric Field-Effect Transistor L. S. Berman pp. 1335-1339 Full Text: PDF (67 kB) Improved Degradation Stability of Blue–Green II–VI Light-Emitting Diodes with Excluded Nitrogen-Doped ZnSe-Based Layers N. Yu. Gordeev, S. V. Ivanov, V. I. Kopchatov, I. I. Novikov, T. V. Shubina, N. D. Il'inskaya, P. S. Kop'ev, G. Reuscher, A. Waag, and G. Landwehr pp. 1340-1344 Full Text: PDF (75 kB) PERSONALIA In Memory of Aleksei Petrovich Shotov Zh. I. Alferov, V. S. Bagaev, B. A. Volkov, A. A. Gippius, A. I. Golovashkin, S. P. Grishechkina, A. I. Demeshina, I. I. Zasavitskii, A. I. Isakov, L. V. Keldysh, Yu. V. Kopaev, B. D. Kopylovskii, O. N. Krokhin, A. I. Nadezhdinskii, I. G. Neizvestnyi, N. A. Penin, Yu. M. Popov, N. N. Sibel'din, V. I. Stafeev, V. A. Chuenkov, V. V. Shestakov, and A. É. Yunovich pp. 1345-1346 Full Text: PDF (23 kB)en
dc.format.extent1831843 bytes
dc.format.extent7987 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 35en
dc.relation.ispartofseriesI. 11en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 35, I. 11en


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