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dc.date.accessioned2007-06-11T20:08:28Z
dc.date.available2007-06-11T20:08:28Z
dc.date.issued2001-10
dc.identifier.urihttp://hdl.handle.net/1951/41431
dc.descriptionSemiconductors -- October 2001 Volume 35, Issue 10, pp. 1117-1221 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Some Aspects of SiC CVD Epitaxy V. V. Zelenin, M. L. Korogodskii, and A. A. Lebedev pp. 1117-1119 Full Text: PDF (37 kB) The Effect of CVD Growth Conditions of 6H-SiC Epilayers on Al Incorporation V. V. Zelenin, M. L. Korogodskii, and A. A. Lebedev pp. 1120-1122 Full Text: PDF (49 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Analysis of the Temperature Dependence of Electron Concentration in CdGeAs2 Single Crystals S. I. Borisenko pp. 1123-1125 Full Text: PDF (43 kB) Nonlinear and Dynamic Properties of Charge Transport in Polycrystalline Silicon under Optical Illumination K. M. Doshchanov pp. 1126-1131 Full Text: PDF (79 kB) Specific Features of the Liquid-Phase Epitaxial Growth of SiC Epilayers in Vacuum D. A. Bauman, A. V. Gavrilin, V. A. Ivantsov, A. M. Morozov, and N. I. Kuznetsov pp. 1132-1134 Full Text: PDF (127 kB) Nonadditive Photoconductivity and Induced States in Zinc Selenide Crystals V. P. Migal' pp. 1135-1138 Full Text: PDF (70 kB) Electrical and Photoelectric Properties of Polycrystalline Textured CdTe Yu. V. Klevkov, S. A. Kolosov, S. A. Medvedev, and A. F. Plotnikov pp. 1139-1143 Full Text: PDF (63 kB) Density of Localized States in (Pb0.78Sn0.22)0.95In0.05Te Solid Solutions S. A. Nemov, D. A. Potapova, Yu. I. Ravich, and S. D. Khanin pp. 1144-1146 Full Text: PDF (42 kB) Interference of Polarized Beams near the Isotropic Point of the CdS Crystal I. V. Brovchenko, V. I. Romanenko, and V. I. Tovstenko pp. 1147-1150 Full Text: PDF (51 kB) Random Potential Relief and Extrinsic Photoconductivity of Compensated Germanium Yu. P. Druzhinin and E. G. Chirkova pp. 1151-1154 Full Text: PDF (60 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities N. A. Penin pp. 1155-1160 Full Text: PDF (89 kB) Thermoelectric Figure of Merit of a p–n Junction Yu. I. Ravich and D. A. Pshenai-Severin pp. 1161-1165 Full Text: PDF (64 kB) The Influence of the Illumination Direction on the Field Distribution in High-Resistivity Metal–Semiconductor Structures B. I. Reznikov pp. 1166-1170 Full Text: PDF (61 kB) Effect of the Annealing Temperature on Erbium Ion Electroluminescence in Si:(Er,O) Diodes with (111) Substrate Orientation N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev pp. 1171-1174 Full Text: PDF (60 kB) LOW-DIMENSIONAL SYSTEMS Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy M. M. Sobolev, I. V. Kochnev[dagger], V. M. Lantratov, and N. N. Ledentsov pp. 1175-1181 Full Text: PDF (80 kB) The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates during Heat Treatment of SiO2 Layers Implanted with Si+ ions G. A. Kachurin, S. G. Yanovskaya, K. S. Zhuravlev, and M.-O. Ruault pp. 1182-1186 Full Text: PDF (75 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Special Features of Photoelectric Properties of Nanostructured Films of Hydrogenated Silicon O. A. Golikova and M. M. Kazanin pp. 1187-1190 Full Text: PDF (56 kB) Numerical Calculation of the Temperature Dependences of Photoconductivity in the p-type a-Si:H S. V. Kuznetsov pp. 1191-1196 Full Text: PDF (82 kB) Effect of Doping with Nitrogen on Electrical Properties and Erbium Electroluminescence of a-Si:H(Er) Films O. I. Kon'kov, E. I. Terukov, and L. S. Granitsyna pp. 1197-1202 Full Text: PDF (83 kB) PHYSICS OF SEMICONDUCTOR DEVICES Difference Mode Generation in Injection Lasers V. Ya. Aleshkin, A. A. Afonenko, and N. B. Zvonkov pp. 1203-1207 Full Text: PDF (61 kB) High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (lambda = 3.3 µm) M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 1208-1212 Full Text: PDF (70 kB) Fabry–Perot a-Si:H/a-SiOx:H Microcavities with an Erbium-Doped a-Si:H Active Layer V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel'kin, and N. A. Feoktistov pp. 1213-1221 Full Text: PDF (130 kB)en
dc.format.extent1326465 bytes
dc.format.extent6881 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 35en
dc.relation.ispartofseriesI. 10en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 35, I. 10en


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