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dc.date.accessioned2007-06-11T20:05:51Z
dc.date.available2007-06-11T20:05:51Z
dc.date.issued2001-08
dc.identifier.urihttp://hdl.handle.net/1951/41429
dc.descriptionSemiconductors -- August 2001 Volume 35, Issue 8, pp. 861-979 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Growth of Fractal Lithium Clusters in Germanium S. V. Bulyarskii, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and P. A. Il'in pp. 861-863 Full Text: PDF (49 kB) Vibration Modes of Oxygen Dimers in Germanium V. V. Litvinov, L. I. Murin, L. Lindström, V. P. Markevich, and A. A. Klechko pp. 864-869 Full Text: PDF (105 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe2 Crystals M. A. Abdullaev, Dz. Kh. Magomedova, R. M. Gadzhieva, E. I. Terukov, Yu. A. Nikolaev, Yu. V. Rud', and P. P. Khokhlachev pp. 870-872 Full Text: PDF (61 kB) The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown of a Compensated Semiconductor with a Shorted Hall Voltage K. M. Jandieri and Z. S. Kachlishvili pp. 873-876 Full Text: PDF (56 kB) Preparation and Properties of Isotopically Pure Polycrystalline Silicon O. N. Godisov, A. K. Kaliteevskii, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, M. A. Kaliteevskii, and P. S. Kop'ev pp. 877-879 Full Text: PDF (46 kB) Electrical Properties of CdxHg1 – xTe/CdZnTe Heterostructures A. G. Belov, A. I. Belogorokhov, and V. M. Lakeenkov pp. 880-882 Full Text: PDF (44 kB) Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin pp. 883-889 Full Text: PDF (88 kB) Origin of an Absorption Band Peaked at 5560 cm–1 and Related to Divacancies in Si1 – xGex Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, and W. Schröder pp. 890-894 Full Text: PDF (71 kB) Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves K. S. Zhuravlev, A. M. Gilinskii, A. V. Tsarev, and A. E. Nikolaenko pp. 895-899 Full Text: PDF (71 kB) Optical Band Gap of Cd1 – xMnxTe and Zn1 – xMnxTe Semiconductors P. V. Zhukovskii, Ya. Partyka, P. Vengerek, Yu. V. Sidorenko, Yu. A. Shostak, and A. Rodzik pp. 900-903 Full Text: PDF (64 kB) The Role of Lead in Growing Ga1 – XInXAsYSb1 – Y Solid Solutions by Liquid-Phase Epitaxy T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, D. A. Vasyukov, and Yu. P. Yakovlev pp. 904-911 Full Text: PDF (105 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Interface States and Deep-Level Centers in Silicon-on-Insulator Structures I. V. Antonova, J. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, and V. A. Skuratov pp. 912-917 Full Text: PDF (80 kB) Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course of Molecular-Beam Epitaxy V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasil'nik, B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, and H. Ellmer pp. 918-923 Full Text: PDF (147 kB) Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals A. Baidullaeva, A. I. Vlasenko, É. I. Kuznetsov, A. V. Lomovtsev, P. E. Mozol', and A. B. Smirnov pp. 924-926 Full Text: PDF (194 kB) Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface V. B. Bondarenko, M. V. Kuz'min, and V. V. Korablev pp. 927-931 Full Text: PDF (65 kB) LOW-DIMENSIONAL SYSTEMS Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As–GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, M. Tabuchi, and Y. Takeda pp. 932-940 Full Text: PDF (238 kB) Optical Properties of Germanium Monolayers on Silicon T. M. Burbaev, T. N. Zavaritskaya, V. A. Kurbatov, N. N. Mel'nik, V. A. Tsvetkov, K. S. Zhuravlev, V. A. Markov, and A. I. Nikiforov pp. 941-946 Full Text: PDF (75 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS The Effect of External Factors on Photoelectric Parameters of Amorphous Hydrogenated Silicon in Relation to the Initial Characteristics of the Films N. Rakhimov, U. Babakhodzhaev, Kh. Mavlyanov, and R. Ikramov pp. 947-948 Full Text: PDF (38 kB) Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs V. N. Denisov, B. N. Mavrin, and V. A. Karavanskii pp. 949-952 Full Text: PDF (61 kB) Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh pp. 953-955 Full Text: PDF (54 kB) X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne A. I. Mashin, A. F. Khokhlov, É. P. Domashevskaya, V. A. Terekhov, and N. I. Mashin pp. 956-961 Full Text: PDF (161 kB) PHYSICS OF SEMICONDUCTOR DEVICES Threshold Characteristics of lambda = 1.55 µm InGaAsP/InP Heterolasers G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, and I. S. Tarasov pp. 962-969 Full Text: PDF (96 kB) An Ionization-Type Si:S-Based Semiconductor Converter of Infrared Images with Sensitivity in the Spectral Range of CO2-Laser Radiation V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, and K. A. Ortaeva pp. 970-973 Full Text: PDF (51 kB) A Study of Technological Processes in the Production of High-Power High-Voltage Bipolar Transistors Incorporating an Array of Inclusions in the Collector Region N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, and A. S. Yastrebov pp. 974-978 Full Text: PDF (404 kB) ERRATA Erratum: "Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing" [Semiconductors 35 (3), 343 (2001)] L. V. Asryan and R. A. Suris p. 979 Full Text: PDF (6 kB)en
dc.format.extent2207727 bytes
dc.format.extent9515 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 35en
dc.relation.ispartofseriesI. 08en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 35, I. 08en


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