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dc.date.accessioned2007-06-11T19:57:51Z
dc.date.available2007-06-11T19:57:51Z
dc.date.issued2001-02
dc.identifier.urihttp://hdl.handle.net/1951/41423
dc.descriptionSemiconductors -- February 2001 Volume 35, Issue 2, pp. 125-241 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Study of Photoluminescence of SiOxNy Films Implanted with Ge+ Ions and Annealed under the Conditions of Hydrostatic Pressure I. E. Tyschenko, K. S. Zhuravlev, E. N. Vandyshev, A. Misiuk, R. A. Yankov, L. Rebohle, and W. Skorupa pp. 125-131 Full Text: PDF (146 kB) Quasi-Local Impurity States in Uniaxially Compressed p-Type Ge A. A. Abramov, V. N. Tulupenko, and D. A. Firsov pp. 132-134 Full Text: PDF (50 kB) The Effect of Stress Fields Produced by Growth Defects on the Dielectric Photoresponse of Cd1 – xZnxTe Crystals I. A. Klimenko, V. K. Komar', V. P. Migal', and D. P. Nalivaiko pp. 135-137 Full Text: PDF (52 kB) Nickel Impurity Excitons and Photoinduced Lattice Distortion in ZnSe1 – ySy:Ni and Zn1 – xCdxSe:Ni Solid Solutions V. I. Sokolov and V. N. Starovoitova pp. 138-143 Full Text: PDF (81 kB) The Edge Ultraviolet Luminescence of GaN:Zn Films Activated in a Nitrogen Plasma A. N. Georgobiani, A. N. Gruzintsev, U. A. Aminov, M. O. Vorob'ev, and I. I. Khodos pp. 144-148 Full Text: PDF (169 kB) Reflection Spectra of Doped Bismuth–Antimony Crystals in the Far-Infrared Region of the Spectrum V. M. Grabov and N. P. Stepanov pp. 149-152 Full Text: PDF (54 kB) The Effect of High-Temperature Epitaxial SiC Layer Growth on the Structure of Porous Silicon Carbide N. S. Savkina, V. V. Ratnikov, and V. B. Shuman pp. 153-157 Full Text: PDF (205 kB) Hopping Transport in Doped (Pb0.78Sn0.22)1 – xInxTe Solid Solutions Yu. I. Ravich and S. A. Nemov pp. 158-163 Full Text: PDF (79 kB) The Spread of Cross Section for Electron Capture by a Trap with a Discrete Energy Level in gamma-La2S3 Crystals E. M. Zobov and M. A. Rizakhanov pp. 164-169 Full Text: PDF (89 kB) Photoluminescence of CuGaTeAs and CuGaSnGa Complexes in n-GaAs under Resonance Polarized Excitation N. S. Averkiev, A. A. Gutkin, and V. E. Sedov pp. 170-174 Full Text: PDF (73 kB) Electrical Conductivity of n-InSb Films in Strong Electric Fields Yu. A. Nikol'skii and S. E. Zyuzin pp. 175-176 Full Text: PDF (45 kB) Surface Gettering of Background Impurities and Defects in GaAs Wafers L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, D. S. Poloskin, and N. M. Shmidt pp. 177-180 Full Text: PDF (55 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Mechanism of Reverse Current in the Al/p-InP Schottky Diodes P. A. Pipinys, A. K. Rimeika, V. A. Lapeika, and A. V. Pipiniene pp. 181-184 Full Text: PDF (70 kB) Quasi-Static Ion Currents in Thin Insulating Films of Metal–Insulator–Semiconductor Structures and the Distribution of Ions in the Films S. G. Dmitriev and Yu. V. Markin pp. 185-192 Full Text: PDF (114 kB) Simulation of Hysteresis in a Metal–Ferroelectric–Semiconductor Structure L. S. Berman pp. 193-195 Full Text: PDF (45 kB) Investigation of a Change in the Chemical Composition of the Surface of CdxHg1 – xTe Samples as a Result of Treatment by N2O and H2 Gases Activated in a High-Frequency Discharge V. V. Vasil'ev, T. I. Zakhar'yash, V. G. Kesler, I. O. Parm, and A. P. Solov'ev pp. 196-198 Full Text: PDF (52 kB) Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier Yu. N. Khanin, K. S. Novoselov, and E. E. Vdovin pp. 199-203 Full Text: PDF (72 kB) Spectra of the Field and Current Oscillations in Superlattices Exposed to Terahertz Laser Radiation Yu. A. Romanov and Yu. Yu. Romanova pp. 204-208 Full Text: PDF (66 kB) Investigation of the SiC/(SiC)1 – x(AlN)x Heterostructures by the Method of Capacitance–Voltage Characteristics M. K. Kurbanov, B. A. Bilalov, Sh. A. Nurmagomedov, and G. K. Safaraliev pp. 209-211 Full Text: PDF (52 kB) LOW-DIMENSIONAL SYSTEMS Electron Localization and Bloch Oscillations in Quantum-Dot Superlattices under a Constant Electric Field I. A. Dmitriev and R. A. Suris pp. 212-219 Full Text: PDF (203 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Optical Properties of Amorphous Carbon Films Deposited by Magnetron Sputtering of Graphite V. I. Ivanov-Omskii, A. V. Tolmatchev, and S. G. Yastrebov pp. 220-225 Full Text: PDF (88 kB) Contrast Enhancement in Image Transfer via Interaction of UV Radiation with Inorganic Photoresist Films N. A. Kaliteevskaya and R. P. Seisyan pp. 226-229 Full Text: PDF (56 kB) Investigation of Surface Morphology of Copper-Modified Amorphous Carbon Films T. K. Zvonareva, V. I. Ivanov-Omskii, S. G. Yastrebov, A. O. Golubok, O. M. Gorbenko, and V. V. Rozanov pp. 230-234 Full Text: PDF (98 kB) Optical Study of InP Quantum Dots D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, Z. N. Sokolova, and I. S. Tarasov pp. 235-237 Full Text: PDF (44 kB) PHYSICS OF SEMICONDUCTOR DEVICES High-Power High-Voltage Bipolar Transistors Based on Complex Semiconductor Structures M. Yu. Volokobinskii, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, and A. S. Yastrebov pp. 238-241 Full Text: PDF (57 kB)en
dc.format.extent1858248 bytes
dc.format.extent8320 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 35en
dc.relation.ispartofseriesI. 02en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 35, I. 02en


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