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dc.descriptionSemiconductors -- January 2001 Volume 35, Issue 1, pp. 1-123 REVIEWS Magnetotransistors I. M. Vikulin, L. F. Vikulina, and V. I. Stafeev pp. 1-9 Full Text: PDF (107 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Kinetics of Production of Oxygen-Containing Quenched-in Donors in Silicon and Their Nonuniform Distribution: An Analytical Solution P. A. Selishchev pp. 10-13 Full Text: PDF (50 kB) Mössbauer-Effect Study of Off-Center Atoms in IV–VI Semiconductors J. Bland, M. F. Thomas, V. A. Virchenko, V. S. Kuz[prime]min, and T. M. Tkachenko pp. 14-19 Full Text: PDF (82 kB) A Long-Range Influence of the Argon-Ion Irradiation on the Silicon Nitride Layers Formed by the Ion Implantation E. S. Demidov, V. V. Karzanov, D. A. Lobanov, K. A. Markov, and V. V. Sdobnyakov pp. 20-23 Full Text: PDF (109 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS A Study of Luminescence Centers Related to Copper and Oxygen in ZnSe N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk pp. 24-32 Full Text: PDF (113 kB) The Concentration Dependence of Acceptor-State Radii in p-Hg0.78Cd0.22Te Crystals V. V. Bogoboyashchii pp. 33-39 Full Text: PDF (101 kB) Infrared Tomography of the Charge-Carrier Lifetime and Diffusion Length in Semiconductor-Grade Silicon Ingots V. D. Akhmetov and N. V. Fateev pp. 40-47 Full Text: PDF (138 kB) Observation of Minority-Carrier Traps in Schottky Diodes with a High Barrier and a Compensated Near-Contact Region Using Deep-Level Transient Spectroscopy E. N. Agafonov, U. A. Aminov, A. N. Georgobiani, and L. S. Lepnev pp. 48-53 Full Text: PDF (80 kB) Effect of the Charge-Carrier Drift in a Built-in Quasi-Electric Field on the Emission Spectrum of the Graded-Gap Semiconductors A. I. Bazyk, V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov pp. 54-58 Full Text: PDF (71 kB) The Electronic Spectrum and Electrical Properties of Germanium with a Doubly Charged Gold Impurity on Both Sides of the L1 [arrow-right-and-left] Delta1 Intervalley Transition for Uniform Pressures of up to 7 GPa M. I. Daunov, I. K. Kamilov, and S. F. Gabibov pp. 59-66 Full Text: PDF (108 kB) Distribution of Electrons between Valleys and Band-Gap Narrowing at Picosecond Superluminescence in GaAs N. N. Ageeva, I. L. Bronevoi, and A. N. Krivonosov pp. 67-71 Full Text: PDF (75 kB) On the Physical Nature of a Photomechanical Effect A. B. Gerasimov, G. D. Chiradze, and N. G. Kutivadze pp. 72-76 Full Text: PDF (73 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Excess Tunneling Currents in p-Si–n-3C-SiC Heterostructures S. Zh. Karazhanov, I. G. Atabaev, T. M. Saliev, É. V. Kanaki, and E. Dzhaksimov pp. 77-79 Full Text: PDF (42 kB) Effect of Sulfur and Selenium on the Surface Relief of Insulating Films and Electrical Characteristics of Metal–Insulator–p-GaAs Structures A. V. Panin, A. R. Shugurov, and V. M. Kalygina pp. 80-85 Full Text: PDF (317 kB) LOW-DIMENSIONAL SYSTEMS Deep Levels Related to Gallium Atom Clusters in GaAs S. N. Grinyaev and V. A. Chaldyshev pp. 86-90 Full Text: PDF (73 kB) Vibrational Spectra of Strained (001) ZnSe/ZnS, ZnSe/ZnTe, and ZnS/ZnTe Superlattices in Terms of the Keating Model E. N. Prykina, Yu. I. Polygalov, and A. V. Kopytov pp. 91-92 Full Text: PDF (35 kB) Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition B. N. Zvonkov, I. A. Karpovich, N. V. Baidus', D. O. Filatov, and S. V. Morozov pp. 93-98 Full Text: PDF (286 kB) Persistent Photoeffects in p–i–n GaAs/AlGaAs Heterostructures with Double Quantum Wells S. I. Dorozhkin, V. B. Timofeev, and J. Hvam pp. 99-105 Full Text: PDF (108 kB) Resonance Tunneling of X-Electrons in AlAs/GaAs(111) Structures: Pseudopotential Calculations and Models G. F. Karavaev and V. N. Chernyshov pp. 106-111 Full Text: PDF (72 kB) Charge-Carrier Transport in Nanometer-Sized Periodic Si/CaF2 Structures with Participation of Traps Yu. A. Berashevich, A. L. Danilyuk, A. N. Kholod, and V. E. Borisenko pp. 112-116 Full Text: PDF (70 kB) PHYSICS OF SEMICONDUCTOR DEVICES An Avalanche Photodiode with Metal–Insulator–Semiconductor Properties Z. Ya. Sadygov, T. M. Burbaev, and V. A. Kurbatov pp. 117-121 Full Text: PDF (72 kB) PERSONALIA Vladimir Mikhailovich Arutyunyan (dedicated to his 60th birthday) pp. 122-123 Full Text: PDF (105 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 35en
dc.relation.ispartofseriesI. 01en
dc.titleSemiconductors V. 35, I. 01en

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