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dc.date.accessioned2007-06-11T19:52:05Z
dc.date.available2007-06-11T19:52:05Z
dc.date.issued2000-10
dc.identifier.urihttp://hdl.handle.net/1951/41419
dc.descriptionSemiconductors -- October 2000 Volume 34, Issue 10, pp. 1103-1228 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Evaluation of Compositional Intermixing at Interfaces in Si(Ge)/Si1 – xGex Heteroepitaxial Structures Grown by Molecular Beam Epitaxy with Combined Sources of Si and GeH4 L. K. Orlov, N. L. Ivina, and A. V. Potapov pp. 1103-1108 Full Text: PDF (88 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Hot-Electron Capture by Negatively Charged Centers in an Approximation of Quasi-elastic Scattering Z. S. Kachlishvili and N. K. Metreveli pp. 1109-1111 Full Text: PDF (43 kB) A Verification of the Applicability of the Monovalent-Defect Model to the Description of Properties of the Vacancy–Oxygen Complex in Silicon L. F. Makarenko pp. 1112-1115 Full Text: PDF (64 kB) Space-Charge-Limited Currents in a Synthetic Semiconducting Diamond Yu. A. Detchuev, V. A. Kryachkov, É. G. Pel', and N. G. Sanzharlinskii pp. 1116-1119 Full Text: PDF (67 kB) Optical Properties of Ca4Ga2S7:Eu2+ B. G. Tagiev, U. F. Kasumov, N. N. Musaeva, R. B. Dzhabbarov, and A. S. Abushov pp. 1120-1123 Full Text: PDF (62 kB) Dielectric Properties of Cd1 – xFexSe Compounds P. V. Zukowski, J. Partyka, P. Wagierek, Yu. Shostak, Yu. Sidorenko, and A. Rodzik pp. 1124-1127 Full Text: PDF (79 kB) Luminescent ZnS:Cu Films Prepared by Chemical Methods S. V. Svechnikov, L. V. Zav'yalova, N. N. Roshchina, V. E. Rodionov, V. S. Khomchenko, L. I. Berezhinskii, I. V. Prokopenko, P. M. Litvin, O. S. Litvin, Yu. V. Kolomzarov, and Yu. A. Tsyrkunov pp. 1128-1132 Full Text: PDF (307 kB) Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum A. A. Lebedev, D. V. Davydov, N. S. Savkina, A. S. Tregubova, M. P. Shcheglov, R. Yakimova, M. Syväjärvi, and E. Janzén pp. 1133-1136 Full Text: PDF (50 kB) Special Features of Photoelectric Properties of p-CdxHg1 – xTe Crystals at Low Temperatures: The Effects of the Freezing-Out of Holes and Elastic Stress S. G. Gasan-Zade, S. V. Staryi, M. V. Strikha, and G. A. Shepel'skii pp. 1137-1143 Full Text: PDF (82 kB) Instability of DX-like Impurity Centers in PbTe:Ga at Annealing D. E. Dolzhenko, V. N. Demin, I. I. Ivanchik, and D. R. Khokhlov pp. 1144-1146 Full Text: PDF (44 kB) Effect of Doping with Gadolinium on the Physical Properties of Hg3In2Te6 O. G. Grushka, P. M. Gorlei, A. V. Bestsennyi, and Z. M. Grushka pp. 1147-1150 Full Text: PDF (64 kB) Comparison of the Polarizations of the 1.2-eV Photoluminescence Band in n-GaAs:Te under Uniaxial Pressure and Resonance Polarized Excitation A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov pp. 1151-1156 Full Text: PDF (85 kB) Evolution of the Density of States during Phase Transitions in Films of Cadmium Sulfotellurides Synthesized under Profoundly Nonequilibrium Conditions A. P. Belyaev, V. P. Rubets, and M. Yu. Nuzhdin pp. 1157-1160 Full Text: PDF (62 kB) Band Gap Estimation for a Triaminotrinitrobenzene Molecular Crystal by the Density-Functional Method K. F. Grebenkin and A. L. Kutepov pp. 1161-1162 Full Text: PDF (22 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Static and High-Frequency Transverse Electrical Conductivity of Isotypical Silicon Structures Obtained by Direct Bonding V. A. Stuchinskii and G. N. Kamaev pp. 1163-1171 Full Text: PDF (135 kB) Influence of an Electric Field on the Strained State of a Heterostructure R. M. Peleshchak, B. A. Lukiyanets, and G. G. Zegrya pp. 1172-1176 Full Text: PDF (62 kB) Effect of Low-Temperature Interphase Charge Transport at the Si/SiO2 Interface on the Photoresponse of Silicon Barrier Structures N. I. Bochkareva and S. A. Khorev pp. 1177-1182 Full Text: PDF (110 kB) A Study of an Al–Ge3N4–Ge Structure by the Method of Photo-Capacitance–Voltage Characteristics R. B. Dzhanelidze, M. B. Dzhanelidze, and M. R. Katsiashvili pp. 1183-1185 Full Text: PDF (42 kB) ZnMgSe/ZnCdSe-Based Distributed Bragg Mirrors Grown by Molecular-Beam Epitaxy on ZnSe Substrates V. I. Kozlovskii, P. A. Trubenko, Yu. V. Korostelin, and V. V. Roddatis pp. 1186-1192 Full Text: PDF (381 kB) LOW-DIMENSIONAL SYSTEMS On the Theory of Photoionization of Deep-Level Impurity Centers in a Parabolic Quantum Well V. D. Krevchik, R. V. Zaitsev, and V. V. Evstifeev pp. 1193-1198 Full Text: PDF (121 kB) A Model of Conduction in Carbon Nanopipe Bundles and Films V. É. Kaminskii pp. 1199-1202 Full Text: PDF (52 kB) Recombination of Self-Trapped Excitons in Silicon Nanocrystals Grown in Silicon Oxide K. S. Zhuravlev and A. Yu. Kobitsky pp. 1203-1206 Full Text: PDF (70 kB) PHYSICS OF SEMICONDUCTOR DEVICES Anomalous Dispersion, Differential Gain, and Dispersion of the alpha-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, M. A. Belkin, and V. P. Konyaev pp. 1207-1213 Full Text: PDF (89 kB) An Artificially Anisotropic Thermoelectric Material with Semiconducting and Superconducting Layers D. A. Pshenai-Severin, Yu. I. Ravich, and M. V. Vedernikov pp. 1214-1218 Full Text: PDF (68 kB) Injection Currents in Silicon Structures with Blocked Hopping Conduction D. G. Esaev and S. P. Sinitsa pp. 1219-1223 Full Text: PDF (65 kB) Charge Transport Mechanism and Photoelectric Characteristics of n+-Si–n-Si–Al2O3–Pd Diode Structures S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu pp. 1224-1228 Full Text: PDF (79 kB)en
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dc.format.extent8893 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 34en
dc.relation.ispartofseriesI. 10en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 34, I. 10en


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