Description
Semiconductors -- August 2000
Volume 34, Issue 8, pp. 861-982
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Radiation Defects in n-6H-SiC Irradiated with 8 MeV Protons
A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovskii, N. S. Savkina, and A. M. Strel'chuk
pp. 861-866 Full Text: PDF (85 kB)
TEM Structural Studies of Undoped and Si-doped GaN Grown on Al2O3 Substrate
N. A. Cherkashin, N. A. Bert, Yu. G. Musikhin, S. V. Novikov, T. S. Cheng, and C. T. Foxon
pp. 867-871 Full Text: PDF (441 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Properties of Precisely Compensated Semiconductors
S. Zh. Karazhanov
pp. 872-879 Full Text: PDF (132 kB)
Electrical Properties of Semiconductors with Pair Defects
S. Zh. Karazhanov and É. V. Kanaki
pp. 880-885 Full Text: PDF (121 kB)
Transition of a Noncavity Bistable Exciton System Driven by Correlated External Noise to a Strongly Absorbing State
Yu. V. Gudyma
pp. 886-888 Full Text: PDF (37 kB)
Variable-Range-Hopping Conduction via Indium Impurity States in Pb0.78Sn0.22Te Solid Solution
S. A. Nemov, V. É. Gasumyants, V. I. Proshin, Yu. V. Ravich, and D. A. Potapova
pp. 889-890 Full Text: PDF (42 kB)
Spectral Shift of Photoluminescence Bands of the (SiC)1 – x(AlN)x Epitaxial Films due to Laser Annealing
G. K. Safaraliev, Yu. N. Émirov, M. K. Kurbanov, and B. A. Bilalov
pp. 891-893 Full Text: PDF (147 kB)
Gallium-induced Deep Level in Pb1 – xGexTe Alloys
E. P. Skipetrov, E. A. Zvereva, V. V. Belousov, L. A. Skipetrova, and E. I. Slyn'ko
pp. 894-896 Full Text: PDF (49 kB)
Hole Concentration and Thermoelectric Figure of Merit for Pb1 – xSnxTe:Te Solid Solutions
G. T. Alekseeva, M. V. Vedernikov, E. A. Gurieva, L. V. Prokof'eva, and Yu. I. Ravich
pp. 897-901 Full Text: PDF (70 kB)
Fine Structure of the Dielectric-Function Spectrum in Diamond
V. V. Sobolev, A. P. Timonov, and V. Val. Sobolev
pp. 902-907 Full Text: PDF (93 kB)
Mutual Electron–Phonon Drag and Low-Temperature Anomalies of Thermoelectric and Thermomagnetic Effects in HgSe:Fe Crystals
I. G. Kuleev and I. Yu. Arapova
pp. 908-915 Full Text: PDF (104 kB)
Ionization Energy of Copper in Hg0.8Cd0.2Te Crystals under Conditions of Light and Intermediate Doping
V. V. Bogoboyashchii
pp. 916-923 Full Text: PDF (117 kB)
Nonlinear Optical Absorption in a Heavily Doped Degenerate n-GaAs
V. L. Malevich and I. A. Utkin
pp. 924-926 Full Text: PDF (46 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Tunnel Light-Emitting Si:(Er,O) Diodes with a Short Rise Time of Er3+ Electroluminescence under Breakdown Conditions
A. M. Emel'yanov, N. A. Sobolev, M. A. Trishenkov, and P. E. Khakuashev
pp. 927-930 Full Text: PDF (73 kB)
Distribution of Mobile Ions in Thin Insulator Films at the Insulator–Semiconductor Interface
S. G. Dmitriev and Yu. V. Markin
pp. 931-936 Full Text: PDF (84 kB)
The Dislocation Nature of a Tunneling Excess Current in GaAs–Ni Structures Modified by Laser Radiation
K. K. Dzhamanbalin and A. G. Dmitriev
pp. 937-938 Full Text: PDF (29 kB)
Thermodynamic and Kinetic Aspects of Reconstruction Transitions at the GaAs(001) Surface
Yu. G. Galitsyn, V. G. Mansurov, S. P. Moshchenko, and A. I. Toropov
pp. 939-944 Full Text: PDF (81 kB)
Electron–Ion Exchange at the Insulator–Semiconductor Interfaces and Its Influence on Ion Transport in the Insulating Layer
E. I. Gol'dman
pp. 945-954 Full Text: PDF (126 kB)
Properties of Diode Heterostructures Based on Nanocrystalline n-SnO2 on p-Si under the Conditions of Gas Adsorption
R. B. Vasil'ev, A. M. Gas'kov, M. N. Rumyantseva, A. S. Ryzhikov, L. I. Ryabova, and B. A. Akimov
pp. 955-959 Full Text: PDF (79 kB)
LOW-DIMENSIONAL SYSTEMS
Band Offsets in Zn1 – xCdxTe/ZnTe Single-Quantum-Well Structures Grown by Molecular-Beam Epitaxy on GaAs(001) Substrates
V. I. Kozlovskii, V. G. Litvinov, and Yu. G. Sadof'ev
pp. 960-964 Full Text: PDF (73 kB)
The Influence of Irradiation and Subsequent Annealing on Si Nanocrystals Formed in SiO2 Layers
G. A. Kachurin, S. G. Yanovskaya, M.-O. Ruault, A. K. Gutakovskii, K. S. Zhuravlev, O. Kaitasov, and H. Bernas
pp. 965-970 Full Text: PDF (398 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
High-Frequency Properties of Avalanche Multiplication of Photocarriers in Structures with Negative Feedback
T. M. Burbaev, V. A. Kurbatov, N. E. Kurochkin, and V. A. Kholodnov
pp. 971-974 Full Text: PDF (54 kB)
Parameters of Metal One-Electron Transistors Based on Various Materials
I. I. Abramov and E. G. Novik
pp. 975-980 Full Text: PDF (73 kB)
IN MEMORIAM
Izmail Arturovich Abroyan
pp. 981-982 Full Text: PDF (80 kB)
