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dc.date.accessioned2007-06-11T19:42:19Z
dc.date.available2007-06-11T19:42:19Z
dc.date.issued2000-03
dc.identifier.urihttp://hdl.handle.net/1951/41412
dc.descriptionSemiconductors -- March 2000 Volume 34, Issue 3, pp. 251-369 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Ultrasound-Induced Surface Hardening of Dislocation-Free Silicon I. V. Ostrovskii, L. P. Steblenko, and A. B. Nadtochii pp. 251-254 Full Text: PDF (256 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Photoelectrical and Electrical Properties of Polycrystalline CdxHg1 – xTe Layers on GaAs Substrates V. A. Gnatyuk, E. S. Gorodnichenko, P. E. Mozol', and A. I. Vlasenko pp. 255-259 Full Text: PDF (59 kB) Kinetics of Attaining the Steady State of Hot Carrier Thermoelectric Power in a p–n Junction with Consideration for Lattice Heating G. Gulyamov, M. G. Dadamirzaev, and S. R. Boidedaev pp. 260-263 Full Text: PDF (57 kB) Structure of the Metastable Centers of the Group-III Atoms in IV–VI Crystals D. E. Onopko and A. I. Ryskin pp. 264-268 Full Text: PDF (48 kB) A Mössbauer Study of a Two-Electron Acceptor Impurity of Zinc in Silicon F. S. Nasredinov, N. P. Seregin, P. P. Seregin, and S. I. Bondarevskii pp. 269-271 Full Text: PDF (52 kB) Multivalley Splitting of the Shallow Donor Energy Spectrum in Semiconductors with Diamond and Sphalerite Structures S. M. Zubkova, V. A. Izyumov, L. N. Rusina, and E. V. Smelyanskaya pp. 272-276 Full Text: PDF (58 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Generation of Minority Charge Carriers at the Semiconductor Surface during Thermally Activated Ionic Depolarization of Metal–Insulator–Semiconductor Structures E. I. Gol'dman, A. G. Zhdan, N. F. Kukharskaya, and G. V. Chucheva pp. 277-283 Full Text: PDF (90 kB) Influence of Humidity and Hydrogen on the Charge Transport in p-InP Diode Structures with a Palladium Contact S. V. Slobodchikov and Kh. M. Salikhov pp. 284-290 Full Text: PDF (80 kB) Study of GaN:O Films and Related Heterostructures S. E. Aleksandrov, T. A. Gavrikova, and V. A. Zykov pp. 291-295 Full Text: PDF (290 kB) Computer Study of Phosphorus Segregation Mechanisms at a SiO2/Si(100) Interface V. G. Zavodinskii pp. 296-299 Full Text: PDF (81 kB) Influence of Electric-Field-Assisted Thermal Ionization on the Formation of the Schottky Barrier between Metal and Amorphous Silicon P. N. Krylov pp. 300-304 Full Text: PDF (56 kB) The Generation–Recombination Current through a Contact of Metal with Amorphous Silicon under the Conditions of Thermal Field Ionization in a Space-Charge Region P. N. Krylov pp. 305-307 Full Text: PDF (39 kB) Effect of Oxygen Adsorption on the Conductivity of Thin SnO2 Films V. V. Kissine, V. V. Sysoev, S. A. Voroshilov, and V. V. Simakov pp. 308-311 Full Text: PDF (52 kB) Special Features of Spatial Redistribution of Selenium Atoms Implanted in Silicon A. A. Taskin, B. A. Zaitsev, V. I. Obodnikov, and E. G. Tishkovskii pp. 312-318 Full Text: PDF (107 kB) LOW-DIMENSIONAL SYSTEMS Photoluminescent and Electroluminescent Properties of Spontaneously Forming Periodic InGaAsP Structures L. S. Vavilova, V. A. Kapitonov, D. A. Livshits, A. V. Lyutetskii, A. V. Murashova, N. A. Pikhtin, G. V. Skrynnikov, and I. S. Tarasov pp. 319-322 Full Text: PDF (67 kB) Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, V. M. Ustinov, N. A. Bert, P. S. Kop'ev, D. Bimberg, and Zh. I. Alferov pp. 323-326 Full Text: PDF (372 kB) Two-Level Wave Functions of Electrons in Double-Barrier Quantum-Size Structures in an Electric Field with Finite Amplitude E. I. Golant and A. B. Pashkovskii pp. 327-333 Full Text: PDF (81 kB) Alternating Space Charge and Ambiguity of Quantum States in Double-Barrier Structures A. B. Pashkovskii pp. 334-343 Full Text: PDF (110 kB) Absorption Features in a-Si/ZrOx Nanostructures A. F. Khokhlov, I. A. Chuchmai, and A. V. Ershov pp. 344-347 Full Text: PDF (62 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Transformation of an Unordered Structural Network in Amorphous Hydrogenated Silicon Films as a Result of Doping with Boron M. M. Mezdrogina and A. V. Patsekin pp. 348-352 Full Text: PDF (65 kB) Classification of Electrical Properties of Porous Silicon S. P. Zimin pp. 353-357 Full Text: PDF (51 kB) Special Features of Relaxation of Metastable States Induced Thermally and by Photoexcitation in (a-Si:H):P Films I. A. Kurova, É. V. Larina, and N. N. Ormont pp. 358-362 Full Text: PDF (69 kB) Amorphous Boron Films with Enhanced Electrical Conductivity O. A. Golikova pp. 363-366 Full Text: PDF (63 kB) Absorption and Photoconductivity of Boron-Compensated µc-Si:H A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh pp. 367-369 Full Text: PDF (63 kB)en
dc.format.extent2137167 bytes
dc.format.extent8081 bytes
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 34en
dc.relation.ispartofseriesI. 03en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 34, I. 03en


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